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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 19 — Sep. 23, 2013
  • pp: 22471–22475

Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

D. Marris-Morini, C. Baudot, J-M. Fédéli, G. Rasigade, N. Vulliet, A. Souhaité, M. Ziebell, P. Rivallin, S. Olivier, P. Crozat, X. Le Roux, D. Bouville, S. Menezo, F. Bœuf, and L. Vivien  »View Author Affiliations


Optics Express, Vol. 21, Issue 19, pp. 22471-22475 (2013)
http://dx.doi.org/10.1364/OE.21.022471


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Abstract

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300mm-SOI wafers using CMOS foundry facilities. 950µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.

© 2013 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: July 24, 2013
Revised Manuscript: September 6, 2013
Manuscript Accepted: September 6, 2013
Published: September 16, 2013

Citation
D. Marris-Morini, C. Baudot, J-M. Fédéli, G. Rasigade, N. Vulliet, A. Souhaité, M. Ziebell, P. Rivallin, S. Olivier, P. Crozat, X. Le Roux, D. Bouville, S. Menezo, F. Bœuf, and L. Vivien, "Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers," Opt. Express 21, 22471-22475 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-19-22471


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