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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 20 — Oct. 7, 2013
  • pp: 23231–23240

Modeling electro-optical characteristics of broad area semiconductor lasers based on a quasi-stationary multimode analysis

Hans-Christoph Eckstein and Uwe Detlef Zeitner  »View Author Affiliations

Optics Express, Vol. 21, Issue 20, pp. 23231-23240 (2013)

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To increase the brightness of broad area laser diodes, it is necessary to tailor the optical properties of their waveguide region. For this purpose, there is the need for simulation tools which can predict the optical properties of the complete device and thus of the outcoupled light. In the present publication, we show a numerical method to calculate typical intensity distributions of the multimode beam inside a high-power semiconductor laser. The model considers effects of mode competition and the influence of the gain medium on the optical field. Simulation results show a good agreement with near and far field measurements of the analyzed broad area laser diodes.

© 2013 OSA

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3410) Lasers and laser optics : Laser resonators
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: July 26, 2013
Revised Manuscript: September 12, 2013
Manuscript Accepted: September 13, 2013
Published: September 24, 2013

Hans-Christoph Eckstein and Uwe Detlef Zeitner, "Modeling electro-optical characteristics of broad area semiconductor lasers based on a quasi-stationary multimode analysis," Opt. Express 21, 23231-23240 (2013)

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