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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 20 — Oct. 7, 2013
  • pp: 23295–23306

Differential receivers with highly -uniform MSM Germanium photodetectors capped by SiGe layer

Makoto Miura, Junichi Fujikata, Masataka Noguchi, Daisuke Okamoto, Tsuyoshi Horikawa, and Yasuhiko Arakawa  »View Author Affiliations

Optics Express, Vol. 21, Issue 20, pp. 23295-23306 (2013)

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Waveguide integrated MSM (metal-semiconductor-metal) Germanium (Ge) photodetectors (PDs) with a SiGe capping layer were exploited for silicon photonics integration. Under optimized epitaxial growth conditions, the capping layer passivated the Ge surface, resulting in sufficiently low dark current of the PDs. In addition, the PDs exhibited a narrower distribution of the dark current than PDs with a Si capping layer, probably due to the lower surface leakage current. Low-noise differential receivers with uniform MSM Ge PDs exhibiting 10 Gbps data transmission were realized.

© 2013 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects

ToC Category:

Original Manuscript: August 15, 2013
Revised Manuscript: September 10, 2013
Manuscript Accepted: September 11, 2013
Published: September 24, 2013

Makoto Miura, Junichi Fujikata, Masataka Noguchi, Daisuke Okamoto, Tsuyoshi Horikawa, and Yasuhiko Arakawa, "Differential receivers with highly -uniform MSM Germanium photodetectors capped by SiGe layer," Opt. Express 21, 23295-23306 (2013)

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