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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 20 — Oct. 7, 2013
  • pp: 23325–23330

Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess

Qing Fang, Lianxi Jia, Junfeng Song, Andy E. J. Lim, Xiaoguang Tu, Xianshu Luo, Mingbin Yu, and Guoqiang Lo  »View Author Affiliations

Optics Express, Vol. 21, Issue 20, pp. 23325-23330 (2013)

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In this paper, we demonstrate a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess on a SOI wafer. A 120nm-deep Si recess is etched on the SOI wafer with a 340nm-thick top Si layer by the TMAH solution. The measured results show that the responsivity is more than 0.60 A/W for TE polarization and is more than 0.65 A/W for TM polarization at 1550 nm wavelength. Compared to the photo-detector without the Si recess, the responsivities for both TE and TM polarizations are improved by ~10%. A low dark current of 170 nA is achieved at a bias voltage of −1 V. And, the 3dB-bandwidth at a bias voltage of −3 V is 21.5 GHz. This approach can be used to improve the coupling and absorption for high responsivity of photo-detector while maintain its high speed on a thick SOI platform based on the simulation results.

© 2013 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: May 20, 2013
Revised Manuscript: July 2, 2013
Manuscript Accepted: July 2, 2013
Published: September 25, 2013

Qing Fang, Lianxi Jia, Junfeng Song, Andy E. J. Lim, Xiaoguang Tu, Xianshu Luo, Mingbin Yu, and Guoqiang Lo, "Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess," Opt. Express 21, 23325-23330 (2013)

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