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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 20 — Oct. 7, 2013
  • pp: 23410–23415

Low-voltage, high speed, compact silicon modulator for BPSK modulation

Tiantian Li, Junlong Zhang, Huaxiang Yi, Wei Tan, Qifeng Long, Zhiping Zhou, Xingjun Wang, and Hequan Wu  »View Author Affiliations


Optics Express, Vol. 21, Issue 20, pp. 23410-23415 (2013)
http://dx.doi.org/10.1364/OE.21.023410


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Abstract

A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, VπLπ equals to 0.45V·cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25Gb/s non-return-to-zero(NRZ)-BPSK with 6Vpp RF driving signal was achieved. Driven by a very low 3Vpp RF signal, the 10Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption.

© 2013 OSA

OCIS Codes
(060.1660) Fiber optics and optical communications : Coherent communications
(130.0250) Integrated optics : Optoelectronics
(230.7408) Optical devices : Wavelength filtering devices

ToC Category:
Integrated Optics

History
Original Manuscript: July 16, 2013
Revised Manuscript: September 15, 2013
Manuscript Accepted: September 17, 2013
Published: September 25, 2013

Citation
Tiantian Li, Junlong Zhang, Huaxiang Yi, Wei Tan, Qifeng Long, Zhiping Zhou, Xingjun Wang, and Hequan Wu, "Low-voltage, high speed, compact silicon modulator for BPSK modulation," Opt. Express 21, 23410-23415 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-20-23410


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