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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 20 — Oct. 7, 2013
  • pp: 23416–23424

Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles

Kung-Hsuan Lin, Sz-Chian Liou, Wei-Liang Chen, Chung-Lun Wu, Gong-Ru Lin, and Yu-Ming Chang  »View Author Affiliations


Optics Express, Vol. 21, Issue 20, pp. 23416-23424 (2013)
http://dx.doi.org/10.1364/OE.21.023416


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Abstract

We demonstrate stable and tunable light emission in ultraviolet to near infrared regime by using annealed SiOx sample. By adjusting the ratio of Si and O of SiOx, different wavelengths such as ultraviolet, visible and near infrared photoluminescence can be tuned. From the results of transmission electron microscope, various sizes (1~4 nm) of the embedded Si nanoparticles were formed. Nanoparticles with smaller sizes were indeed formed for UV-blue emitting samples and the origin of light emission may be misattributed to the quantum confinement effects. However, we found the efficient and stable light emission in UV-blue regime, with lifetime on the order of nanoseconds, is dominantly from the defects.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:
Optoelectronics

History
Original Manuscript: July 16, 2013
Revised Manuscript: September 17, 2013
Manuscript Accepted: September 17, 2013
Published: September 25, 2013

Citation
Kung-Hsuan Lin, Sz-Chian Liou, Wei-Liang Chen, Chung-Lun Wu, Gong-Ru Lin, and Yu-Ming Chang, "Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles," Opt. Express 21, 23416-23424 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-20-23416


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References

  1. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys.82(3), 909–965 (1997). [CrossRef]
  2. L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990). [CrossRef]
  3. C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B Condens. Matter48(15), 11024–11036 (1993). [CrossRef] [PubMed]
  4. H. Mizuno, H. Koyama, and N. Koshida, “Oxide-free blue photoluminescence from photochemically etched porous silicon,” Appl. Phys. Lett.69(25), 3779–3781 (1996). [CrossRef]
  5. J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B45(24), 14171–14176 (1992). [CrossRef]
  6. Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter48(7), 4883–4886 (1993). [CrossRef] [PubMed]
  7. T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter47(20), 13876–13879 (1993). [CrossRef] [PubMed]
  8. A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett.65(11), 1436–1438 (1994). [CrossRef]
  9. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett.82(1), 197–200 (1999). [CrossRef]
  10. D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett.64(2), 214–216 (1994). [CrossRef]
  11. G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, “Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder,” Appl. Phys. Lett.69(12), 1689–1691 (1996). [CrossRef]
  12. A. Sa'ar, “Photoluminescence from silicon nanostructures: The mutual role of quantum confinement and surface chemistry,” J. Nanophotonics3(1), 032501 (2009). [CrossRef]
  13. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett.80(4), 661–663 (2002). [CrossRef]
  14. D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, “Quantum confined luminescence in Si/SiO2 superlattices,” Phys. Rev. Lett.76(3), 539–541 (1996). [CrossRef] [PubMed]
  15. B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys.92(7), 3564–3568 (2002). [CrossRef]
  16. S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol.3(3), 174–178 (2008). [CrossRef] [PubMed]
  17. X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology20(48), 485703 (2009). [CrossRef] [PubMed]
  18. X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys.9(9), 337 (2007). [CrossRef]
  19. B. H. Lai, C. H. Cheng, Y. H. Pai, and G. R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si quantum dot size for photoluminescent wavelength tailoring,” Opt. Express18(5), 4449–4456 (2010). [CrossRef] [PubMed]
  20. L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett.94(4), 043115 (2009). [CrossRef]
  21. M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology18(31), 315707 (2007). [CrossRef]
  22. K. Y. Kuo, S. W. Hsu, P. R. Huang, W. L. Chuang, C. C. Liu, and P. T. Lee, “Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film,” Opt. Express20(10), 10470–10475 (2012). [CrossRef] [PubMed]
  23. C. H. Chang, Y. H. Pai, J. H. He, and G. R. Lin, “Wavelength-tunable blue photoluminescence of < 2 nm Si nanocrystal synthesized by ultra-low-flow-density PECVD,” Acta Mater.58(4), 1270–1275 (2010). [CrossRef]
  24. V. Svrcek, D. Mariotti, and M. Kondo, “Ambient-stable blue luminescent silicon nanocrystals prepared by nanosecond-pulsed laser ablation in water,” Opt. Express17(2), 520–527 (2009). [CrossRef] [PubMed]
  25. C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express21(1), 391–403 (2013). [CrossRef] [PubMed]
  26. G. R. Lin, C. W. Lian, C. L. Wu, and Y. H. Lin, “Gain analysis of optically-pumped Si nanocrystal waveguide amplifiers on silicon substrate,” Opt. Express18(9), 9213–9219 (2010). [CrossRef] [PubMed]
  27. R. F. Egerton, Electron energy-loss spectroscopy in the electron microscope. (Plenum Press, 1996).
  28. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys.95(7), 3723–3732 (2004). [CrossRef]
  29. S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy108(4), 346–357 (2008). [CrossRef] [PubMed]
  30. S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett.71(5), 698–700 (1997). [CrossRef]
  31. X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett.86(20), 201906 (2005). [CrossRef]
  32. P. R. Barber, S. M. Ameer-Beg, J. Gilbey, R. J. Edens, I. Ezike, and B. Vojnovic, in Multiphoton Microscopy in the Biomedical Sciences V, edited by A. Periasamy and P. T. C. So 5700, 171 (2005).
  33. M. Schmidt, J. Heimann, R. Scholz, V. Y. Timoshenko, M. G. Lisachenko, and M. Zacharias, in Advanced Luminescent Materials and Quantum Confinement II, edited by M. Cahay, J. P. Leburton, D. J. Lockwood et al. (Electrochemical Society, Pennington, 2002), p.83.
  34. R. Guerra and S. Ossicini, “High luminescence in small Si/SiO2 nanocrystals: A theoretical study,” Phys. Rev. B81(24), 245307 (2010). [CrossRef]
  35. K. Žídek, F. Trojánek, P. Malý, L. Ondič, I. Pelant, K. Dohnalová, L. Šiller, R. Little, and B. R. Horrocks, “Femtosecond luminescence spectroscopy of core states in silicon nanocrystals,” Opt. Express18(24), 25241–25249 (2010). [CrossRef] [PubMed]

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