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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 25901–25906

InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation

Andreas Beling, Allen S. Cross, Molly Piels, Jon Peters, Qiugui Zhou, John E. Bowers, and Joe C. Campbell  »View Author Affiliations


Optics Express, Vol. 21, Issue 22, pp. 25901-25906 (2013)
http://dx.doi.org/10.1364/OE.21.025901


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Abstract

High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA·GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.

© 2013 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5170) Optical devices : Photodiodes
(060.5625) Fiber optics and optical communications : Radio frequency photonics

ToC Category:
Detectors

History
Original Manuscript: August 21, 2013
Revised Manuscript: October 5, 2013
Manuscript Accepted: October 9, 2013
Published: October 22, 2013

Citation
Andreas Beling, Allen S. Cross, Molly Piels, Jon Peters, Qiugui Zhou, John E. Bowers, and Joe C. Campbell, "InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation," Opt. Express 21, 25901-25906 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-22-25901


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References

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