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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 26034–26043

Broadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions

Rishi Maiti, Santanu Manna, Anupam Midya, and Samit K Ray  »View Author Affiliations

Optics Express, Vol. 21, Issue 22, pp. 26034-26043 (2013)

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We report a novel graphene oxide (GO) based p-n heterojunction on n-Si. The fabricated vertical GO/n-Si heterojunction diode shows a very low leakage current density of 0.25 µA/cm2 and excellent rectification characteristics upto 1 MHz. The device on illumination shows a broadband (300–1100 nm) spectral response with a characteristic peak at ~700 nm, in agreement with the photoluminescence emission from GO. Very high photo-to-dark current ratio (>105) is observed upon illumination of UV light. The transient photocurrent measurements indicate that the GO based heterojunction diodes can be useful for UV and broadband photodetectors, compatible with silicon device technology.

© 2013 Optical Society of America

OCIS Codes
(230.0040) Optical devices : Detectors
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics

ToC Category:
Optical Devices

Original Manuscript: July 24, 2013
Revised Manuscript: September 3, 2013
Manuscript Accepted: September 21, 2013
Published: October 23, 2013

Rishi Maiti, Santanu Manna, Anupam Midya, and Samit K Ray, "Broadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions," Opt. Express 21, 26034-26043 (2013)

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