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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 26688–26692

Deposited low temperature silicon GHz modulator

Yoon Ho Daniel Lee, Michael O. Thompson, and Michal Lipson  »View Author Affiliations


Optics Express, Vol. 21, Issue 22, pp. 26688-26692 (2013)
http://dx.doi.org/10.1364/OE.21.026688


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Abstract

We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.

© 2013 Optical Society of America

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(310.1860) Thin films : Deposition and fabrication
(250.4110) Optoelectronics : Modulators

ToC Category:
Optoelectronics

History
Original Manuscript: August 13, 2013
Revised Manuscript: October 21, 2013
Manuscript Accepted: October 21, 2013
Published: October 29, 2013

Citation
Yoon Ho Daniel Lee, Michael O. Thompson, and Michal Lipson, "Deposited low temperature silicon GHz modulator," Opt. Express 21, 26688-26692 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-22-26688


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