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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 26729–26734

Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates

Jiejiang Xing, Zhiyong Li, Yude Yu, and Jinzhong Yu  »View Author Affiliations

Optics Express, Vol. 21, Issue 22, pp. 26729-26734 (2013)

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A novel design for a polarization-independent SOI-based 2 × 2 3-dB adiabatic splitter with sub-micron-scale dimensions is proposed and modeled. To achieve slow and smooth mode evolution, a structure with simultaneous tapering of velocity and coupling is used. To reduce the adiabatic region length by adjusting the gap separation, the coupling strengths of TE and TM polarizations as a function of the gap value are analyzed. For both polarizations, a high uniformity within ± 0.2dB over a broad bandwidth from 1520 to 1650 nm is achieved with a 300-μm-long adiabatic region.

© 2013 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.1360) Optical devices : Beam splitters

ToC Category:
Integrated Optics

Original Manuscript: August 26, 2013
Revised Manuscript: October 11, 2013
Manuscript Accepted: October 23, 2013
Published: October 29, 2013

Jiejiang Xing, Zhiyong Li, Yude Yu, and Jinzhong Yu, "Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates," Opt. Express 21, 26729-26734 (2013)

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