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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 22 — Nov. 4, 2013
  • pp: 27102–27110

High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm2

M. L. Tsai, J. H. Liao, J. H. Yeh, T. C. Hsu, S. J. Hon, T. Y. Chung, and K. Y. Lai  »View Author Affiliations

Optics Express, Vol. 21, Issue 22, pp. 27102-27110 (2013)

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High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m·K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm2, the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: May 14, 2013
Revised Manuscript: June 24, 2013
Manuscript Accepted: September 12, 2013
Published: October 31, 2013

M. L. Tsai, J. H. Liao, J. H. Yeh, T. C. Hsu, S. J. Hon, T. Y. Chung, and K. Y. Lai, "High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm2," Opt. Express 21, 27102-27110 (2013)

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