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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 23 — Nov. 18, 2013
  • pp: 27578–27586

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez  »View Author Affiliations


Optics Express, Vol. 21, Issue 23, pp. 27578-27586 (2013)
http://dx.doi.org/10.1364/OE.21.027578


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Abstract

We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-pz intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs.

© 2013 Optical Society of America

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.1150) Optical devices : All-optical devices
(230.7370) Optical devices : Waveguides

ToC Category:
Optical Devices

History
Original Manuscript: July 22, 2013
Revised Manuscript: October 17, 2013
Manuscript Accepted: October 17, 2013
Published: November 4, 2013

Citation
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez, "Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs," Opt. Express 21, 27578-27586 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-23-27578


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