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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 24 — Dec. 2, 2013
  • pp: 29374–29382

Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

Yangjin Ma, Yi Zhang, Shuyu Yang, Ari Novack, Ran Ding, Andy Eu-Jin Lim, Guo-Qiang Lo, Tom Baehr-Jones, and Michael Hochberg  »View Author Affiliations

Optics Express, Vol. 21, Issue 24, pp. 29374-29382 (2013)

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We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of − 0.028 ± 0.009 dB for the 1550 nm device and − 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than − 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.

© 2013 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(220.0220) Optical design and fabrication : Optical design and fabrication
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

Original Manuscript: October 16, 2013
Revised Manuscript: November 12, 2013
Manuscript Accepted: November 14, 2013
Published: November 20, 2013

Yangjin Ma, Yi Zhang, Shuyu Yang, Ari Novack, Ran Ding, Andy Eu-Jin Lim, Guo-Qiang Lo, Tom Baehr-Jones, and Michael Hochberg, "Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect," Opt. Express 21, 29374-29382 (2013)

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