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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 24 — Dec. 2, 2013
  • pp: 30065–30073

Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates

Vin-Cent Su, Po-Hsun Chen, Ray-Ming Lin, Ming-Lun Lee, Yao-Hong You, Chung-I Ho, Yi-Chi Chen, Wei-Fan Chen, and Chieh-Hsiung Kuan  »View Author Affiliations

Optics Express, Vol. 21, Issue 24, pp. 30065-30073 (2013)

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This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally measured data and the ray-tracing simulation results, the suppressed efficiency droop for the InGaN-based LED having the nano-sized PCSS with a smaller space of 200nm can be acquired due to the weaker function of the QCSE within the MQWs as a result of the smaller polarization fields coming from the lower compressive strain in the corresponding epitaxial layers.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: October 8, 2013
Revised Manuscript: November 20, 2013
Manuscript Accepted: November 20, 2013
Published: November 27, 2013

Vin-Cent Su, Po-Hsun Chen, Ray-Ming Lin, Ming-Lun Lee, Yao-Hong You, Chung-I Ho, Yi-Chi Chen, Wei-Fan Chen, and Chieh-Hsiung Kuan, "Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates," Opt. Express 21, 30065-30073 (2013)

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