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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 25 — Dec. 16, 2013
  • pp: 30716–30723

High-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm

In Gyoo Kim, Ki-Seok Jang, Jiho Joo, Sanghoon Kim, Sanggi Kim, Kwang-Seong Choi, Jin Hyuk Oh, Sun Ae Kim, and Gyungock Kim  »View Author Affiliations

Optics Express, Vol. 21, Issue 25, pp. 30716-30723 (2013)

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We present high-sensitivity photoreceivers based on a vertical- illumination-type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f-3dB) of 29 GHz demonstrates the sensitivities of −10.15 dBm for 40 Gb/s data rate and −9.47 dBm for 43 Gb/s data rate, at BER of 10−12 and λ ~1550 nm. Also a photoreceiver based on a Ge PD with f-3dB~19 GHz shows −14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of vertical-illumination type Ge PDs ready for practical high-speed network applications.

© 2013 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(060.4510) Fiber optics and optical communications : Optical communications
(130.0250) Integrated optics : Optoelectronics
(200.4650) Optics in computing : Optical interconnects

ToC Category:

Original Manuscript: October 22, 2013
Revised Manuscript: November 29, 2013
Manuscript Accepted: November 30, 2013
Published: December 5, 2013

In Gyoo Kim, Ki-Seok Jang, Jiho Joo, Sanghoon Kim, Sanggi Kim, Kwang-Seong Choi, Jin Hyuk Oh, Sun Ae Kim, and Gyungock Kim, "High-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm," Opt. Express 21, 30716-30723 (2013)

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