High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

doi:10.1364/OE.21.002733

High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

C. Tessarek, G. Sarau, M. Kiometzis, and S. Christiansen »View Author Affiliations

Optics Express, Vol. 21, Issue 3, pp. 2733-2740 (2013)
http://dx.doi.org/10.1364/OE.21.002733

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Abstract

Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo- and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods.

OCIS Codes
(160.4670) Materials : Optical materials
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.5750) Optical devices : Resonators
(250.1500) Optoelectronics : Cathodoluminescence
(250.5230) Optoelectronics : Photoluminescence

ToC Category:
Integrated Optics

History
Original Manuscript: July 19, 2012
Revised Manuscript: September 29, 2012
Manuscript Accepted: December 19, 2012
Published: January 29, 2013

Citation
C. Tessarek, G. Sarau, M. Kiometzis, and S. Christiansen, "High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy," Opt. Express 21, 2733-2740 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-3-2733

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References

K. J. Vahala, “Optical microcavities,” Nature424, 839–846 (2003). [CrossRef] [PubMed]
G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors,” Nature Phys.2, 81–90 (2006). [CrossRef]
G. Malpuech, A. Di Carlo, A. V. Kavokin, J. J. Baumberg, M. Zamfirescu, and P. Lugli, “Room-temperature polariton lasers based on GaN microcavities,” Appl. Phys. Lett.81, 412–414 (2002). [CrossRef]
S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett.98, 126405 (2007). [CrossRef] [PubMed]
A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous wave lasing in GaN/InGaN microdisks,” Nature Photon.1, 61–64 (2007). [CrossRef]
T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett.93, 103903 (2004). [CrossRef] [PubMed]
R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater.23, 2199–2204 (2011). [CrossRef] [PubMed]
T. Kouno, K. Kishino, and M. Sakai, “Lasing action on whispering gallery mode of self-organized GaN hexagonal microdisk crystal fabricated by RF-plasma-assisted molecular beam epitaxy,” IEEE J. Quantum Electron.47, 1565–1570 (2011). [CrossRef]
C. Tessarek and S. Christiansen, “Self-catalyzed, vertically aligned GaN rod-structures by metal-organic vapor phase epitaxy,” Phys. Status Solidi C9, 596–600 (2012). [CrossRef]
N. Grandjean, J. Massies, and M. Leroux, “Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers,” Appl. Phys. Lett.69, 2071–2073 (1996). [CrossRef]
X. J. Chen, G. Perillat-Merceroz, D. Sam-Giao, C. Durand, and J. Eymery, “Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates,” Appl. Phys. Lett.97, 151909 (2010). [CrossRef]
S. F. Li, S. Fuendling, X. Wang, S. Merzsch, M. A. M. Al-Suleiman, J. D. Wei, H.-H. Wehmann, A. Waag, W. Bergbauer, and M. Strassburg, “Polarity and itsiInfluence on growth mechanism during MOVPE growth of GaN sub-micrometer rods,” Cryst. Growth Des.11, 1573–1577 (2011). [CrossRef]
R. Koester, J. S. Hwang, C. Durand, D. Le Si Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapor phase epitaxy,” Nanotech.21, 015602 (2010). [CrossRef]
C. Cheze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Khegias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas, “Direct comparison of catalyst-free and catalyst-induced GaN nanowires,” Nano Res.3, 528–536 (2010). [CrossRef]
M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys.97, 061301 (2005). [CrossRef]
J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A67, 023807 (2003). [CrossRef]
M. J. Bergmann, Ü. Özgür, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlGaN epitaxial layers,” Appl. Phys. Lett.75, 67–69 (1999). [CrossRef]
B. C. Joshi, M. Mathew, B. C Joshi, D. Kumar, and C. Dhanavantri, “Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapor deposition for high electron mobility transistor applications,” Pranama - J. Phys.74, 135–141 (2010). [CrossRef]
C. Bulutay, C. M. Turgut, and N. A. Zakhleniuk, “Carrier-induced refractive change and optical absorption in wurtzite InN and GaN: Full-band approach,” Phys. Rev. B81, 155206 (2010). [CrossRef]
G. Cywinski, R. Kudrawiec, W. Rzodkiewicz, M. Krysko, E. Litwin-Staszewska, B. Lucznik, J. Misiewicz, and C. Skierbiszewki, “Doping-induced contrast in the refractive index for GaInN/GaN structures at telecommunication wavelengths,” Appl. Phys. Express2, 111001 (2009). [CrossRef]
E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, “Optical properties of Si-doped GaN,” Appl. Phys. Lett.71, 921–923 (1997). [CrossRef]
T. Nobis, A. Rahm, C. Czekalla, M. Lorenz, and M. Grundmann, “Optical whispering gallery modes in dodecagonal zinc oxide microcrystals,” Superlatt. Microstr.42, 333–336 (2007). [CrossRef]
T. Nobis and M. Grundmann, “Low-order optical whispering-gallery modes in hexagonal nanocavities,” Phys. Rev. A72, 063806 (2005). [CrossRef]
A. C. Tamboli, M. C. Schmidt, A. Hirai, S. P. DenBaars, and E. L. Hu, “Observation of whispering gallery modes in nonpolar m-plane GaN microdisks,” Appl. Phys. Lett.94, 251116 (2009). [CrossRef]
S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys.111, 071101 (2012). [CrossRef]
F. Vollmer, D. Braun, A. Libchaber, M. Khoshsima, I. Teraoka, and S. Arnold, “Protein detection by optical shift of a resonant microcavity,” Appl. Phys. Lett.80, 4057–4059 (2002). [CrossRef]
K. Srinivasan, A. Stintz, S. Krishna, and O. Painter, “Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides,” Phys. Rev. B72, 205318 (2005). [CrossRef]
D. J. Gargas, M. C. Moore, A. Ni, S.-W. Chang, Z. Zhang, S.-L. Chuang, and P. Yang, “Whispering gallery mode lasing from zinc oxide hexagonal nanodisks,” ACS Nano4, 3270–3276 (2010). [CrossRef] [PubMed]

Al-Suleiman, M. A. M.
Arnold, S.
Baldassarri Höger von Högersthal, G.
Baumberg, J. J.
Bergbauer, W.
Bergmann, M. J.
Brandt, O.
Braun, D.
Bulutay, C.
Butté, R.
Carlin, J.-F.
Casey, H. C.
Chang, S.-W.
Chen, R.
Chen, X. J.
Cheze, C.
Christiansen, S.
Christmann, G.
Christopoulos, S.
Chuang, S.-L.
Cywinski, G.
Czekalla, C.
DenBaars, S. P.
Dhanavantri, C.
Di Carlo, A.
Dimitrakopulos, G. P.
Durand, C.
Everitt, H. O.
Eymery, J.
Feltin, E.
Forchel, A.
Fuendling, S.
Gargas, D. J.
Geelhaar, L.
Gibbs, H. M.
Goepfert, I. D.
Grandjean, N.
Grieshaber, W.
Grundmann, M.
Grundy, A. J. D.
Haberer, E. D.
Hirai, A.
Hu, E. L.
Hwang, J. S.
Joshi, B. C
Joshi, B. C.
Kaidashev, E. M.
Karakostas, T.
Kavokin, A. V.
Khegias, T.
Khitrova, G.
Khoshsima, M.
Kira, M.
Kishino, K.
Koch, S. W.
Koester, R.
Komninou, P.
Kouno, T.
Krishna, S.
Krysko, M.
Kudrawiec, R.
Kumar, D.
Lagoudakis, P. G.
Le Si Dang, D.
Lee, K. H.
Leroux, M.
Li, S.
Li, S. F.
Libchaber, A.
Ling, B.
Litwin-Staszewska, E.
Lorenz, M.
Lucznik, B.
Lugli, P.
Malpuech, G.
Massies, J.
Mathew, M.
Merzsch, S.
Misiewicz, J.
Moore, M. C.
Morkoc, H.
Münch, S.
Muth, J. F.
Nakamura, S.
Ni, A.
Nobis, T.
Özgür, Ü.
Painter, O.
Perillat-Merceroz, G.
Rahm, A.
Redwing, J. M.
Reitzenstein, S.
Reshchikov, M. A.
Riechert, H.
Rothemund, R.
Rzodkiewicz, W.
Sakai, M.
Sam-Giao, D.
Scherer, A.
Schmidt, M. C.
Schubert, E. F.
Sharma, R.
Skierbiszewki, C.
Srinivasan, K.
Stintz, A.
Strassburg, M.
Sun, H. D.
Sun, X. W.
Tamboli, A. C.
Teraoka, I.
Tessarek, C.
Turgut, C. M.
Vahala, K. J.
Vollmer, F.
Waag, A.
Wang, X.
Weber, W. M.
Wehmann, H.-H.
Wei, J. D.
Wiersig, J.
Yang, P.
Zakhleniuk, N. A.
Zamfirescu, M.
Zhang, Z.

ACS Nano

D. J. Gargas, M. C. Moore, A. Ni, S.-W. Chang, Z. Zhang, S.-L. Chuang, and P. Yang, “Whispering gallery mode lasing from zinc oxide hexagonal nanodisks,” ACS Nano4, 3270–3276 (2010). [CrossRef] [PubMed]

Adv. Mater.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater.23, 2199–2204 (2011). [CrossRef] [PubMed]

Appl. Phys. Express

G. Cywinski, R. Kudrawiec, W. Rzodkiewicz, M. Krysko, E. Litwin-Staszewska, B. Lucznik, J. Misiewicz, and C. Skierbiszewki, “Doping-induced contrast in the refractive index for GaInN/GaN structures at telecommunication wavelengths,” Appl. Phys. Express2, 111001 (2009). [CrossRef]

Appl. Phys. Lett.

E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, “Optical properties of Si-doped GaN,” Appl. Phys. Lett.71, 921–923 (1997). [CrossRef]
A. C. Tamboli, M. C. Schmidt, A. Hirai, S. P. DenBaars, and E. L. Hu, “Observation of whispering gallery modes in nonpolar m-plane GaN microdisks,” Appl. Phys. Lett.94, 251116 (2009). [CrossRef]
F. Vollmer, D. Braun, A. Libchaber, M. Khoshsima, I. Teraoka, and S. Arnold, “Protein detection by optical shift of a resonant microcavity,” Appl. Phys. Lett.80, 4057–4059 (2002). [CrossRef]
G. Malpuech, A. Di Carlo, A. V. Kavokin, J. J. Baumberg, M. Zamfirescu, and P. Lugli, “Room-temperature polariton lasers based on GaN microcavities,” Appl. Phys. Lett.81, 412–414 (2002). [CrossRef]
N. Grandjean, J. Massies, and M. Leroux, “Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers,” Appl. Phys. Lett.69, 2071–2073 (1996). [CrossRef]
X. J. Chen, G. Perillat-Merceroz, D. Sam-Giao, C. Durand, and J. Eymery, “Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates,” Appl. Phys. Lett.97, 151909 (2010). [CrossRef]
M. J. Bergmann, Ü. Özgür, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlGaN epitaxial layers,” Appl. Phys. Lett.75, 67–69 (1999). [CrossRef]

Cryst. Growth Des.

S. F. Li, S. Fuendling, X. Wang, S. Merzsch, M. A. M. Al-Suleiman, J. D. Wei, H.-H. Wehmann, A. Waag, W. Bergbauer, and M. Strassburg, “Polarity and itsiInfluence on growth mechanism during MOVPE growth of GaN sub-micrometer rods,” Cryst. Growth Des.11, 1573–1577 (2011). [CrossRef]

IEEE J. Quantum Electron.

T. Kouno, K. Kishino, and M. Sakai, “Lasing action on whispering gallery mode of self-organized GaN hexagonal microdisk crystal fabricated by RF-plasma-assisted molecular beam epitaxy,” IEEE J. Quantum Electron.47, 1565–1570 (2011). [CrossRef]

J. Appl. Phys.

M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys.97, 061301 (2005). [CrossRef]
S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys.111, 071101 (2012). [CrossRef]

Nano Res.

C. Cheze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Khegias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas, “Direct comparison of catalyst-free and catalyst-induced GaN nanowires,” Nano Res.3, 528–536 (2010). [CrossRef]

Nanotech.

R. Koester, J. S. Hwang, C. Durand, D. Le Si Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapor phase epitaxy,” Nanotech.21, 015602 (2010). [CrossRef]

Nature

K. J. Vahala, “Optical microcavities,” Nature424, 839–846 (2003). [CrossRef] [PubMed]

Nature Photon.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous wave lasing in GaN/InGaN microdisks,” Nature Photon.1, 61–64 (2007). [CrossRef]

Nature Phys.

G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors,” Nature Phys.2, 81–90 (2006). [CrossRef]

Phys. Rev. A

J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A67, 023807 (2003). [CrossRef]
T. Nobis and M. Grundmann, “Low-order optical whispering-gallery modes in hexagonal nanocavities,” Phys. Rev. A72, 063806 (2005). [CrossRef]

Phys. Rev. B

C. Bulutay, C. M. Turgut, and N. A. Zakhleniuk, “Carrier-induced refractive change and optical absorption in wurtzite InN and GaN: Full-band approach,” Phys. Rev. B81, 155206 (2010). [CrossRef]
K. Srinivasan, A. Stintz, S. Krishna, and O. Painter, “Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides,” Phys. Rev. B72, 205318 (2005). [CrossRef]

Phys. Rev. Lett.

S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett.98, 126405 (2007). [CrossRef] [PubMed]
T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett.93, 103903 (2004). [CrossRef] [PubMed]

Phys. Status Solidi C

C. Tessarek and S. Christiansen, “Self-catalyzed, vertically aligned GaN rod-structures by metal-organic vapor phase epitaxy,” Phys. Status Solidi C9, 596–600 (2012). [CrossRef]

Pranama - J. Phys.

B. C. Joshi, M. Mathew, B. C Joshi, D. Kumar, and C. Dhanavantri, “Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapor deposition for high electron mobility transistor applications,” Pranama - J. Phys.74, 135–141 (2010). [CrossRef]

Superlatt. Microstr.

T. Nobis, A. Rahm, C. Czekalla, M. Lorenz, and M. Grundmann, “Optical whispering gallery modes in dodecagonal zinc oxide microcrystals,” Superlatt. Microstr.42, 333–336 (2007). [CrossRef]

2012, Tessarek, Phys. Status Solidi C
2012, Li, J. Appl. Phys.
2011, Chen, Adv. Mater.
2011, Kouno, IEEE J. Quantum Electron.
2011, Li, Cryst. Growth Des.
2010, Koester, Nanotech.
2010, Cheze, Nano Res.
2010, Joshi, Pranama - J. Phys.
2010, Bulutay, Phys. Rev. B
2010, Chen, Appl. Phys. Lett.
2010, Gargas, ACS Nano
2009, Tamboli, Appl. Phys. Lett.
2009, Cywinski, Appl. Phys. Express
2007, Christopoulos, Phys. Rev. Lett.
2007, Tamboli, Nature Photon.
2007, Nobis, Superlatt. Microstr.
2006, Khitrova, Nature Phys.
2005, Reshchikov, J. Appl. Phys.
2005, Nobis, Phys. Rev. A
2005, Srinivasan, Phys. Rev. B
2004, Nobis, Phys. Rev. Lett.
2003, Wiersig, Phys. Rev. A
2003, Vahala, Nature
2002, Vollmer, Appl. Phys. Lett.
2002, Malpuech, Appl. Phys. Lett.
1999, Bergmann, Appl. Phys. Lett.
1997, Schubert, Appl. Phys. Lett.
1996, Grandjean, Appl. Phys. Lett.

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[1] K. J. Vahala, “Optical microcavities,” Nature424, 839–846 (2003). [CrossRef] [PubMed]

[2] G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A. Scherer, “Vacuum Rabi splitting in semiconductors,” Nature Phys.2, 81–90 (2006). [CrossRef]

[3] G. Malpuech, A. Di Carlo, A. V. Kavokin, J. J. Baumberg, M. Zamfirescu, and P. Lugli, “Room-temperature polariton lasers based on GaN microcavities,” Appl. Phys. Lett.81, 412–414 (2002). [CrossRef]

[4] S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett.98, 126405 (2007). [CrossRef] [PubMed]

[5] A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous wave lasing in GaN/InGaN microdisks,” Nature Photon.1, 61–64 (2007). [CrossRef]

[6] T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett.93, 103903 (2004). [CrossRef] [PubMed]

[7] R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater.23, 2199–2204 (2011). [CrossRef] [PubMed]

[8] T. Kouno, K. Kishino, and M. Sakai, “Lasing action on whispering gallery mode of self-organized GaN hexagonal microdisk crystal fabricated by RF-plasma-assisted molecular beam epitaxy,” IEEE J. Quantum Electron.47, 1565–1570 (2011). [CrossRef]

[9] C. Tessarek and S. Christiansen, “Self-catalyzed, vertically aligned GaN rod-structures by metal-organic vapor phase epitaxy,” Phys. Status Solidi C9, 596–600 (2012). [CrossRef]

[10] N. Grandjean, J. Massies, and M. Leroux, “Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers,” Appl. Phys. Lett.69, 2071–2073 (1996). [CrossRef]

[11] X. J. Chen, G. Perillat-Merceroz, D. Sam-Giao, C. Durand, and J. Eymery, “Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates,” Appl. Phys. Lett.97, 151909 (2010). [CrossRef]

[12] S. F. Li, S. Fuendling, X. Wang, S. Merzsch, M. A. M. Al-Suleiman, J. D. Wei, H.-H. Wehmann, A. Waag, W. Bergbauer, and M. Strassburg, “Polarity and itsiInfluence on growth mechanism during MOVPE growth of GaN sub-micrometer rods,” Cryst. Growth Des.11, 1573–1577 (2011). [CrossRef]

[13] R. Koester, J. S. Hwang, C. Durand, D. Le Si Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapor phase epitaxy,” Nanotech.21, 015602 (2010). [CrossRef]

[14] C. Cheze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Khegias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas, “Direct comparison of catalyst-free and catalyst-induced GaN nanowires,” Nano Res.3, 528–536 (2010). [CrossRef]

[15] M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys.97, 061301 (2005). [CrossRef]

[16] J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A67, 023807 (2003). [CrossRef]

[17] M. J. Bergmann, Ü. Özgür, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlGaN epitaxial layers,” Appl. Phys. Lett.75, 67–69 (1999). [CrossRef]

[18] B. C. Joshi, M. Mathew, B. C Joshi, D. Kumar, and C. Dhanavantri, “Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapor deposition for high electron mobility transistor applications,” Pranama - J. Phys.74, 135–141 (2010). [CrossRef]

[19] C. Bulutay, C. M. Turgut, and N. A. Zakhleniuk, “Carrier-induced refractive change and optical absorption in wurtzite InN and GaN: Full-band approach,” Phys. Rev. B81, 155206 (2010). [CrossRef]

[20] G. Cywinski, R. Kudrawiec, W. Rzodkiewicz, M. Krysko, E. Litwin-Staszewska, B. Lucznik, J. Misiewicz, and C. Skierbiszewki, “Doping-induced contrast in the refractive index for GaInN/GaN structures at telecommunication wavelengths,” Appl. Phys. Express2, 111001 (2009). [CrossRef]

[21] E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, “Optical properties of Si-doped GaN,” Appl. Phys. Lett.71, 921–923 (1997). [CrossRef]

[22] T. Nobis, A. Rahm, C. Czekalla, M. Lorenz, and M. Grundmann, “Optical whispering gallery modes in dodecagonal zinc oxide microcrystals,” Superlatt. Microstr.42, 333–336 (2007). [CrossRef]

[23] T. Nobis and M. Grundmann, “Low-order optical whispering-gallery modes in hexagonal nanocavities,” Phys. Rev. A72, 063806 (2005). [CrossRef]

[24] A. C. Tamboli, M. C. Schmidt, A. Hirai, S. P. DenBaars, and E. L. Hu, “Observation of whispering gallery modes in nonpolar m-plane GaN microdisks,” Appl. Phys. Lett.94, 251116 (2009). [CrossRef]

[25] S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys.111, 071101 (2012). [CrossRef]

[26] F. Vollmer, D. Braun, A. Libchaber, M. Khoshsima, I. Teraoka, and S. Arnold, “Protein detection by optical shift of a resonant microcavity,” Appl. Phys. Lett.80, 4057–4059 (2002). [CrossRef]

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High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

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