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Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etchingJun Ma, Liancheng Wang, Zhiqiang Liu, Guodong Yuan, Xiaoli Ji, Ping Ma, Junxi Wang, Xiaoyan Yi, Guohong Wang, and Jinmin Li »View Author Affiliations
Jun Ma,
Liancheng Wang,
Zhiqiang Liu,
Guodong Yuan,
Xiaoli Ji,
Ping Ma,
Junxi Wang,
Xiaoyan Yi,*
Guohong Wang,
and Jinmin Li
Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China *Corresponding author: spring@semi.ac.cn |
Optics Express, Vol. 21, Issue 3, pp. 3547-3556 (2013)
http://dx.doi.org/10.1364/OE.21.003547
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Abstract
In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite difference time domain method was 20% higher than typical roughened V-LEDs. The reversed leakage current of HPA V-LEDs was reduced due to better crystal quality, which was confirmed by conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA V-LEDs were substantially alleviated.
© 2013 OSA
OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
ToC Category:
Optoelectronics
History
Original Manuscript: October 31, 2012
Revised Manuscript: January 11, 2013
Manuscript Accepted: January 23, 2013
Published: February 5, 2013
Citation
Jun Ma, Liancheng Wang, Zhiqiang Liu, Guodong Yuan, Xiaoli Ji, Ping Ma, Junxi Wang, Xiaoyan Yi, Guohong Wang, and Jinmin Li, "Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching," Opt. Express 21, 3547-3556 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-3-3547
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References
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- H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G. A. Botton, and Z. Mi, “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Nano Lett.12(3), 1317–1323 (2012). [CrossRef] [PubMed]
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- T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, and C. J. Humphreys, “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates,” Jpn. J. Appl. Phys.50(8), 080201 (2011). [CrossRef]
- P. J. Dean, “Absorption and luminescence of excitons at neutral donors in gallium phosphide,” Phys. Rev.157(3), 655–667 (1967). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
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- H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, “High extraction efficiency InGaN micro-ring light-emitting diodes,” Appl. Phys. Lett.83(22), 4483 (2003). [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
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- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
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- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B56(16), R10024–R10027 (1997). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855 (2004). [CrossRef]
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
- T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, and C. J. Humphreys, “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates,” Jpn. J. Appl. Phys.50(8), 080201 (2011). [CrossRef]
- M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.95(20), 201108 (2009). [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
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- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
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- S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang, “GaN microdisk light emitting diodes,” Appl. Phys. Lett.76(5), 631 (2000). [CrossRef]
- S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang, “GaN microdisk light emitting diodes,” Appl. Phys. Lett.76(5), 631 (2000). [CrossRef]
- H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett.4(6), 1059–1062 (2004). [CrossRef]
- J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate,” Jpn. J. Appl. Phys.44(4B), 2509–2511 (2005). [CrossRef]
- T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, and C. J. Humphreys, “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates,” Jpn. J. Appl. Phys.50(8), 080201 (2011). [CrossRef]
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- H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett.4(6), 1059–1062 (2004). [CrossRef]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
- J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J.-L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. (Deerfield Beach Fla.)24(17), 2259–2262 (2012). [CrossRef] [PubMed]
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- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
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- J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate,” Jpn. J. Appl. Phys.44(4B), 2509–2511 (2005). [CrossRef]
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- S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang, “GaN microdisk light emitting diodes,” Appl. Phys. Lett.76(5), 631 (2000). [CrossRef]
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- C.-F. Chu, C.-C. Yu, H.-C. Cheng, C.-F. Lin, and S.-C. Wang, “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys.42(Part 2, No. 2B), L147–L150 (2003). [CrossRef]
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- B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett.91(18), 181103 (2007). [CrossRef]
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- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
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- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
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- J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J.-L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. (Deerfield Beach Fla.)24(17), 2259–2262 (2012). [CrossRef] [PubMed]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J.-L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. (Deerfield Beach Fla.)24(17), 2259–2262 (2012). [CrossRef] [PubMed]
- J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B273–274, 24–32 (1999). [CrossRef]
- P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Electrical characterization of GaN p-n junctions with and without threading dislocations,” Appl. Phys. Lett.73(7), 975 (1998). [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B56(16), R10024–R10027 (1997). [CrossRef]
- Ch.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95, 3916 (2004).
- J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate,” Jpn. J. Appl. Phys.44(4B), 2509–2511 (2005). [CrossRef]
- C.-F. Chu, C.-C. Yu, H.-C. Cheng, C.-F. Lin, and S.-C. Wang, “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys.42(Part 2, No. 2B), L147–L150 (2003). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
- H. M. Ng, N. G. Weimann, and A. Chowdhury, “GaN nanotip pyramids formed by anisotropic etching,” J. Appl. Phys.94(1), 650 (2003). [CrossRef]
- F. E. Williams and H. Eyring, “The mechanism of the luminescence of solids,” J. Chem. Phys.15(5), 289–304 (1947). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- Y. Yang, X. A. Cao, and C. H. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron. Dev.55(7), 1771–1775 (2008). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- Y. Yang, X. A. Cao, and C. H. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron. Dev.55(7), 1771–1775 (2008). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- Ch.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95, 3916 (2004).
- C.-F. Chu, C.-C. Yu, H.-C. Cheng, C.-F. Lin, and S.-C. Wang, “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys.42(Part 2, No. 2B), L147–L150 (2003). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.95(20), 201108 (2009). [CrossRef]
- H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G. A. Botton, and Z. Mi, “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Nano Lett.12(3), 1317–1323 (2012). [CrossRef] [PubMed]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
Adv. Mater. (Deerfield Beach Fla.)
- J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J.-L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. (Deerfield Beach Fla.)24(17), 2259–2262 (2012). [CrossRef] [PubMed]
Appl. Phys. Lett.
- P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, “Electrical characterization of GaN p-n junctions with and without threading dislocations,” Appl. Phys. Lett.73(7), 975 (1998). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett.91(18), 181103 (2007). [CrossRef]
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
- M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.95(20), 201108 (2009). [CrossRef]
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- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855 (2004). [CrossRef]
Cryst. Growth Des.
- J.-H. Kim, C.-S. Oh, Y.-H. Ko, S.-M. Ko, K.-Y. Park, M. Jeong, J. Y. Lee, and Y.-H. Cho, “Dislocation-eliminating chemical control method for high-efficiency GaN-based light emitting nanostructures,” Cryst. Growth Des.12(3), 1292–1298 (2012). [CrossRef]
IEEE Photon. Technol. Lett.
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
IEEE Trans. Electron. Dev.
- Y. Yang, X. A. Cao, and C. H. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron. Dev.55(7), 1771–1775 (2008). [CrossRef]
J. Appl. Phys.
- H. M. Ng, N. G. Weimann, and A. Chowdhury, “GaN nanotip pyramids formed by anisotropic etching,” J. Appl. Phys.94(1), 650 (2003). [CrossRef]
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J. Chem. Phys.
- F. E. Williams and H. Eyring, “The mechanism of the luminescence of solids,” J. Chem. Phys.15(5), 289–304 (1947). [CrossRef]
J. Cryst. Growth
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Jpn. J. Appl. Phys.
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- C.-F. Chu, C.-C. Yu, H.-C. Cheng, C.-F. Lin, and S.-C. Wang, “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys.42(Part 2, No. 2B), L147–L150 (2003). [CrossRef]
- J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate,” Jpn. J. Appl. Phys.44(4B), 2509–2511 (2005). [CrossRef]
Nano Lett.
- H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G. A. Botton, and Z. Mi, “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Nano Lett.12(3), 1317–1323 (2012). [CrossRef] [PubMed]
- H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett.4(6), 1059–1062 (2004). [CrossRef]
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Phys. Rev. B
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Physica B
- J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B273–274, 24–32 (1999). [CrossRef]
Other
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2012, Nguyen, Nano Lett.
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- J.-H. Kim, C.-S. Oh, Y.-H. Ko, S.-M. Ko, K.-Y. Park, M. Jeong, J. Y. Lee, and Y.-H. Cho, “Dislocation-eliminating chemical control method for high-efficiency GaN-based light emitting nanostructures,” Cryst. Growth Des.12(3), 1292–1298 (2012). [CrossRef]
- J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J.-L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. (Deerfield Beach Fla.)24(17), 2259–2262 (2012). [CrossRef] [PubMed]
- T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, and C. J. Humphreys, “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates,” Jpn. J. Appl. Phys.50(8), 080201 (2011). [CrossRef]
- Y. B. Tao, T. J. Yu, Z. Y. Yang, D. Ling, Y. Wang, Z. Z. Chen, Z. J. Yang, and G. Y. Zhang, “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy,” J. Cryst. Growth315(1), 183–187 (2011). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.95(20), 201108 (2009). [CrossRef]
- M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett.93(4), 041102 (2008). [CrossRef]
- Y. Yang, X. A. Cao, and C. H. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron. Dev.55(7), 1771–1775 (2008). [CrossRef]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
- B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett.91(18), 181103 (2007). [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
- W. Y. Lin, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, and R. H. Horng, “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques,” IEEE Photon. Technol. Lett.17(9), 1809–1811 (2005). [CrossRef]
- J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate,” Jpn. J. Appl. Phys.44(4B), 2509–2511 (2005). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855 (2004). [CrossRef]
- Ch.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys.95, 3916 (2004).
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