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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 3932–3940

High nonlinear figure-of-merit amorphous silicon waveguides

J. Matres, G. C. Ballesteros, P. Gautier, J-M Fédéli, J. Martí, and C. J. Oton  »View Author Affiliations


Optics Express, Vol. 21, Issue 4, pp. 3932-3940 (2013)
http://dx.doi.org/10.1364/OE.21.003932


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Abstract

The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient γ is measured by four-wave-mixing and the imaginary part of γ is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient γ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples.

© 2012 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(160.4330) Materials : Nonlinear optical materials
(190.0190) Nonlinear optics : Nonlinear optics
(190.4380) Nonlinear optics : Nonlinear optics, four-wave mixing

ToC Category:
Nonlinear Optics

History
Original Manuscript: July 5, 2012
Revised Manuscript: October 5, 2012
Manuscript Accepted: October 9, 2012
Published: February 11, 2013

Citation
J. Matres, G. C. Ballesteros, P. Gautier, J-M Fédéli, J. Martí, and C. J. Oton, "High nonlinear figure-of-merit amorphous silicon waveguides," Opt. Express 21, 3932-3940 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-4-3932


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