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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 4311–4318

Optics InfoBase > Optics Express > Volume 21 > Issue 4 > Page 4311

Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs

Kejian Yang, Dirk Heinecke, Jonna Paajaste, Christoph Kölbl, Thomas Dekorsy, Soile Suomalainen, and Mircea Guina  »View Author Affiliations


Optics Express, Vol. 21, Issue 4, pp. 4311-4318 (2013)
http://dx.doi.org/10.1364/OE.21.004311


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Abstract

We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.

© 2013 OSA

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(140.7090) Lasers and laser optics : Ultrafast lasers
(160.6000) Materials : Semiconductor materials

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: November 29, 2012
Revised Manuscript: January 22, 2013
Manuscript Accepted: January 28, 2013
Published: February 12, 2013

Citation
Kejian Yang, Dirk Heinecke, Jonna Paajaste, Christoph Kölbl, Thomas Dekorsy, Soile Suomalainen, and Mircea Guina, "Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs," Opt. Express 21, 4311-4318 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-4-4311


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