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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 4439–4446

Asymmetric femtosecond laser ablation of silicon surface governed by the evolution of surface nanostructures

Cheng-Yun Zhang, Jian-Wu Yao, Chang-Qing Li, Qiao-Feng Dai, Sheng Lan, Vyacheslav A. Trofimov, and Tatiana M. Lysak  »View Author Affiliations


Optics Express, Vol. 21, Issue 4, pp. 4439-4446 (2013)
http://dx.doi.org/10.1364/OE.21.004439


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Abstract

The femtosecond laser ablation of silicon surface near the ablation threshold was investigated and the preferential ablation along different directions was observed in different stages. It was found that the ripples formed in the initial stage facilitate the ablation along the direction perpendicular to the ripples, leading to the formation of an elliptical ablation area. With increasing length and depth of the ripples, however, nanohole arrays formed in the ripples will modify the distribution of electric field which benefits the ablation along the direction parallel to the ripples. Consequently, the ablation area is gradually changed to a circular one after irradiating sufficient number of pulses.

© 2013 OSA

OCIS Codes
(320.7090) Ultrafast optics : Ultrafast lasers
(350.3390) Other areas of optics : Laser materials processing
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Laser Microfabrication

History
Original Manuscript: November 15, 2012
Revised Manuscript: January 23, 2013
Manuscript Accepted: February 7, 2013
Published: February 13, 2013

Citation
Cheng-Yun Zhang, Jian-Wu Yao, Chang-Qing Li, Qiao-Feng Dai, Sheng Lan, Vyacheslav A. Trofimov, and Tatiana M. Lysak, "Asymmetric femtosecond laser ablation of silicon surface governed by the evolution of surface nanostructures," Opt. Express 21, 4439-4446 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-4-4439


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