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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 4 — Feb. 25, 2013
  • pp: 4728–4733

Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature

K. Ding, M. T. Hill, Z. C. Liu, L. J. Yin, P. J. van Veldhoven, and C. Z. Ning  »View Author Affiliations


Optics Express, Vol. 21, Issue 4, pp. 4728-4733 (2013)
http://dx.doi.org/10.1364/OE.21.004728


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Abstract

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

© 2013 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.3948) Lasers and laser optics : Microcavity devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 14, 2012
Revised Manuscript: January 19, 2013
Manuscript Accepted: February 10, 2013
Published: February 19, 2013

Citation
K. Ding, M. T. Hill, Z. C. Liu, L. J. Yin, P. J. van Veldhoven, and C. Z. Ning, "Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature," Opt. Express 21, 4728-4733 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-4-4728


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