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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 6 — Mar. 25, 2013
  • pp: 7180–7195

Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment

Kevin Carney, Robert Lennox, Ramon Maldonado-Basilio, Severine Philippe, Frederic Surre, Louise Bradley, and Pascal Landais  »View Author Affiliations

Optics Express, Vol. 21, Issue 6, pp. 7180-7195 (2013)

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The consequences of tailoring the longitudinal carrier density along the active layer of a multi-contact bulk semiconductor optical amplifier (SOA) are investigated using a rate equation model. It is shown that both the noise figure and output power saturation can be optimized for a fixed total injected bias current. The simulation results are validated by comparison with experiment using a multi-contact SOA. The inter-contact resistance is increased using a focused ion beam in order to optimize the carrier density control. A chip noise figure of 3.8 dB and a saturation output power of 9 dBm are measured experimentally for a total bias current of 150 mA.

© 2013 OSA

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:

Original Manuscript: November 21, 2012
Revised Manuscript: February 15, 2013
Manuscript Accepted: March 4, 2013
Published: March 14, 2013

Kevin Carney, Robert Lennox, Ramon Maldonado-Basilio, Severine Philippe, Frederic Surre, Louise Bradley, and Pascal Landais, "Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment," Opt. Express 21, 7180-7195 (2013)

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