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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 7 — Apr. 8, 2013
  • pp: 8444–8449

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

Chuanyu Jia, Tongjun Yu, Huimin Lu, Cantao Zhong, Yongjian Sun, Yuzhen Tong, and Guoyi Zhang  »View Author Affiliations


Optics Express, Vol. 21, Issue 7, pp. 8444-8449 (2013)
http://dx.doi.org/10.1364/OE.21.008444


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Abstract

The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based kp method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20mA was about 15.3mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: February 6, 2013
Revised Manuscript: March 17, 2013
Manuscript Accepted: March 21, 2013
Published: March 29, 2013

Citation
Chuanyu Jia, Tongjun Yu, Huimin Lu, Cantao Zhong, Yongjian Sun, Yuzhen Tong, and Guoyi Zhang, "Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs," Opt. Express 21, 8444-8449 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-7-8444


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