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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 7 — Apr. 8, 2013
  • pp: 8444–8449

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

Chuanyu Jia, Tongjun Yu, Huimin Lu, Cantao Zhong, Yongjian Sun, Yuzhen Tong, and Guoyi Zhang  »View Author Affiliations

Optics Express, Vol. 21, Issue 7, pp. 8444-8449 (2013)

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The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based kp method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20mA was about 15.3mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function.

© 2013 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: February 6, 2013
Revised Manuscript: March 17, 2013
Manuscript Accepted: March 21, 2013
Published: March 29, 2013

Chuanyu Jia, Tongjun Yu, Huimin Lu, Cantao Zhong, Yongjian Sun, Yuzhen Tong, and Guoyi Zhang, "Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs," Opt. Express 21, 8444-8449 (2013)

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  1. S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett.64(13), 1687–1689 (1994). [CrossRef]
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours,” Appl. Phys. Lett.70(11), 1417–1419 (1997). [CrossRef]
  3. S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science281(5379), 956–961 (1998). [CrossRef] [PubMed]
  4. Y. T. Rebane, Y. G. Shreter, B. S. Yavich, V. E. Bougrov, S. I. Stepanov, and W. N. Wang, “Light emitting diode with charge asymmetric resonance tunneling,” Phys. Status Solidi A180(1), 121–126 (2000). [CrossRef]
  5. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, “Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect,” Appl. Phys. Lett.73(12), 1691–1693 (1998). [CrossRef]
  6. J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photon. Technol. Lett.13(11), 1164–1166 (2001). [CrossRef]
  7. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett.72(6), 710–712 (1998). [CrossRef]
  8. I. H. Kim, H. S. Park, Y. J. Park, and T. Kim, “Formation of V-shaped pits in InGaN/GaN multi-quantum wells and bulk InGaN films,” Appl. Phys. Lett.73(12), 1634–1636 (1998). [CrossRef]
  9. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett.79(2), 215–217 (2001). [CrossRef]
  10. S. J. Huang, Y. K. Su, C. Y. Tseng, S. C. Lin, and H. C. Hsu, “Improvement of light intensity for nitride-based multi-quantum well light emitting diodes by stepwise-stage electron emitting layer,” Appl. Phys. Express3(12), 122106 (2010). [CrossRef]
  11. H. C. Hsu, Y. K. Su, S. J. Huang, C. Y. Tseng, C. Y. Cheng, and K. C. Chen, “Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure,” IEEE Photon. Technol. Lett.23, 287–289 (2011).
  12. V. Ramesh, A. Kikuchi, K. Kishino, M. Funato, and Y. Kawakami, “Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well,” J. Appl. Phys.107(11), 114303 (2010). [CrossRef]
  13. Q. Wang, J. Bai, Y. P. Gong, and T. Wang, “Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods,” J. Phys. D Appl. Phys.44(39), 395102 (2011). [CrossRef]
  14. N. H. Niu, H. B. Wang, J. P. Liu, N. X. Liu, Y. H. Xing, J. Han, J. Deng, and G. D. Shen, “Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer,” J. Cryst. Growth286(2), 209–212 (2006). [CrossRef]
  15. P. C. Tsai, Y. K. Su, W. R. Chen, and C. Y. Huang, “Enhanced luminescence efficiency of InGaN/GaN multiple quantum wells by a strain relief layer and proper Si doping,” Jpn. J. Appl. Phys.49(4), 04DG07 (2010). [CrossRef]
  16. S. J. Leem, Y. C. Shin, K. C. Kim, E. H. Kim, Y. M. Sung, Y. Moon, S. M. Hwang, and T. G. Kim, “The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers,” J. Cryst. Growth311(1), 103–106 (2008). [CrossRef]
  17. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, “High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers,” Appl. Phys. Lett.85(15), 3089–3091 (2004). [CrossRef]
  18. C. H. Jang, J. K. Shey, C. M. Tsai, S. J. Chang, W. C. Lai, M. L. Lee, T. K. Ko, C. F. Shen, and S. C. Shei, “Improved performance of GaN-Based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer,” IEEE J. Quantum Electron.46(4), 513–517 (2010). [CrossRef]
  19. R. M. Lin, Y. H. Lin, C. H. Chiang, M. J. Lai, Y. L. Chou, Y. C. Lu, S. Y. Kuo, B. R. Fang, and M. C. Wu, “Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs,” Microelectron. Reliab.50(5), 679–682 (2010). [CrossRef]
  20. S. L. Chuang, “Optical gain of strained wurtzite GaN quantum-well lasers,” IEEE J. Quantum Electron.32(10), 1791–1800 (1996). [CrossRef]
  21. H. M. Lu and G. X. Chen, “Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes,” J. Appl. Phys.109(9), 093102 (2011). [CrossRef]
  22. T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys.92(6), 3071–3074 (2002). [CrossRef]

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