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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 8 — Apr. 22, 2013
  • pp: 10324–10334

Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities

Laurent-Daniel Haret, Xavier Checoury, Fabien Bayle, Nicolas Cazier, Philippe Boucaud, Sylvain Combrié, and Alfredo de Rossi  »View Author Affiliations

Optics Express, Vol. 21, Issue 8, pp. 10324-10334 (2013)

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Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.

© 2013 OSA

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(140.3948) Lasers and laser optics : Microcavity devices
(230.5298) Optical devices : Photonic crystals

ToC Category:
Photonic Crystals

Original Manuscript: February 11, 2013
Revised Manuscript: March 22, 2013
Manuscript Accepted: March 25, 2013
Published: April 19, 2013

Laurent-Daniel Haret, Xavier Checoury, Fabien Bayle, Nicolas Cazier, Philippe Boucaud, Sylvain Combrié, and Alfredo de Rossi, "Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities," Opt. Express 21, 10324-10334 (2013)

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