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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 8 — Apr. 22, 2013
  • pp: 10335–10341

Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets

M-L Ma, J Wu, Y-Q Ning, F Zhou, M Yang, X Zhang, J Zhang, and G-Y Shang  »View Author Affiliations

Optics Express, Vol. 21, Issue 8, pp. 10335-10341 (2013)

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In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra.

© 2013 OSA

OCIS Codes
(250.5960) Optoelectronics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: February 13, 2013
Revised Manuscript: April 1, 2013
Manuscript Accepted: April 2, 2013
Published: April 19, 2013

M-L Ma, J Wu, Y-Q Ning, F Zhou, M Yang, X Zhang, J Zhang, and G-Y Shang, "Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets," Opt. Express 21, 10335-10341 (2013)

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