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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 8 — Apr. 22, 2013
  • pp: 9643–9651

Optoelectrical and low-frequency noise characteristics of flexible ZnO–SiO2 photodetectors with organosilicon buffer layer

Wei-Chih Lai, Jiun-Ting Chen, and Ya-Yu Yang  »View Author Affiliations

Optics Express, Vol. 21, Issue 8, pp. 9643-9651 (2013)

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The present study demonstrates the optoelectrical and low-frequency noise characteristics of ZnO–SiO2 nanocomposite solar-blind metal–semiconductor–metal photodetectors (MSM PDs) on flexible polyethersulfone (PES) substrate with and without an organosilicon [SiOx(CH3)] buffer layer. For a given bandwidth of 100 Hz and a −5 V applied bias, the noise equivalent powers of the ZnO–SiO2 nanocomposite MSM PD on PES with and without the SiOx(CH3) buffer layer were 1.39 × 10−14 and 5.72 × 10−14 W at 240nm, respectively, corresponding to the normalized detectivities of 5.04 × 1014 and 1.22 × 1014 Hz0.5 W−1, respectively. These findings indicate that a lower noise level and a higher detectivity can be achieved for ZnO–SiO2 nanocomposite MSM PDs on PES by introducing a SiOx(CH3) buffer layer.

© 2013 OSA

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(230.5160) Optical devices : Photodetectors
(310.6870) Thin films : Thin films, other properties
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Optical Devices

Original Manuscript: March 4, 2013
Revised Manuscript: April 4, 2013
Manuscript Accepted: April 8, 2013
Published: April 11, 2013

Wei-Chih Lai, Jiun-Ting Chen, and Ya-Yu Yang, "Optoelectrical and low-frequency noise characteristics of flexible ZnO–SiO2 photodetectors with organosilicon buffer layer," Opt. Express 21, 9643-9651 (2013)

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