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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 9 — May. 6, 2013
  • pp: 10430–10439

Electrically controlled Goos-Hänchen shift of a light beam reflected from the metal-insulator-semiconductor structure

Changyou Luo, Jun Guo, Qingkai Wang, Yuanjiang Xiang, and Shuangchun Wen  »View Author Affiliations

Optics Express, Vol. 21, Issue 9, pp. 10430-10439 (2013)

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We proposed a scheme to manipulate the Goos-Hänchen shift of a light beam reflected from the depletion-type device via external voltage bias. It is shown that the lateral shift of the reflected probe beam can be easily controlled by adjusting the reverse voltage bias and the incidence angle. Using this scheme, the lateral shift can be tuned from negative to positive, without changing the original structure of the depletion-type device. Numerical calculations further indicate that the influence of structure parameters and light wavelength can be reduced via readjustment of the reverse bias. The proposed structure has the potential application for the integrated electronic devices.

© 2013 OSA

OCIS Codes
(120.5700) Instrumentation, measurement, and metrology : Reflection
(130.5990) Integrated optics : Semiconductors
(240.0240) Optics at surfaces : Optics at surfaces
(260.2110) Physical optics : Electromagnetic optics
(260.3060) Physical optics : Infrared

ToC Category:
Optics at Surfaces

Original Manuscript: January 29, 2013
Revised Manuscript: March 17, 2013
Manuscript Accepted: April 2, 2013
Published: April 22, 2013

Changyou Luo, Jun Guo, Qingkai Wang, Yuanjiang Xiang, and Shuangchun Wen, "Electrically controlled Goos-Hänchen shift of a light beam reflected from the metal-insulator-semiconductor structure," Opt. Express 21, 10430-10439 (2013)

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