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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 9 — May. 6, 2013
  • pp: 10483–10489

Electrically pumped random lasing from FTO/porous insulator/n-ZnO/p+-Si devices

Yanjun Fang, Yewu Wang, Xi Ding, Ren Lu, Lin Gu, and Jian Sha  »View Author Affiliations

Optics Express, Vol. 21, Issue 9, pp. 10483-10489 (2013)

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Electrically pumped random lasing (RL) has been realized in FTO/porous insulator/n-ZnO/p+-Si devices. It is demonstrated that RL originates from the confining and recurrent scattering of light in the random cavities within the insulating layer, which are formed due to the glow discharge. The glow discharge also induces the observed negative differential resistance (NDR) effect following the normal I-V characteristics. The results present a new strategy to realize electrically pumped RL in ZnO-based metal-insulator-semiconductor device by simply modifying the morphology of the insulating layer.

© 2013 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.2090) Optical devices : Electro-optical devices
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 13, 2013
Revised Manuscript: April 15, 2013
Manuscript Accepted: April 15, 2013
Published: April 22, 2013

Virtual Issues
Vol. 8, Iss. 6 Virtual Journal for Biomedical Optics

Yanjun Fang, Yewu Wang, Xi Ding, Ren Lu, Lin Gu, and Jian Sha, "Electrically pumped random lasing from FTO/porous insulator/n-ZnO/p+-Si devices," Opt. Express 21, 10483-10489 (2013)

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