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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 21, Iss. 9 — May. 6, 2013
  • pp: 11448–11456

Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application

Zhigang Zang, Atsushi Nakamura, and Jiro Temmyo  »View Author Affiliations


Optics Express, Vol. 21, Issue 9, pp. 11448-11456 (2013)
http://dx.doi.org/10.1364/OE.21.011448


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Abstract

Cuprous oxide (Cu2O) films synthesis by radical oxidation with nitrogen (N2) plasma treatment and different RF power at low temperature (500°C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu2O thin films grow on c-sapphire substrate with preferred (111) orientation. With nitrogen (N2) plasma treatment, the optical bandgap energy is increased from 1.69 to 2.42 eV, when N2 plasma treatment time is increased from 0 min to 40 min. Although the hole density is increased from 1014 to 1015 cm−3 and the resistivity is decreased from 1879 to 780Ωcm after N2 plasma treatment, the performance of Cu2O films is poorer compared to that of Cu2O using RF power of 0. The fabricated ZnO/Cu2O solar cells based on Cu2O films with RF power of 0 W show a good rectifying behavior with a efficiency of 0.02%, an open-circuit voltage of 0.1 V, and a fill factor of 24%.

© 2013 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(310.0310) Thin films : Thin films
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Thin Films

History
Original Manuscript: November 27, 2012
Revised Manuscript: February 11, 2013
Manuscript Accepted: February 18, 2013
Published: May 3, 2013

Citation
Zhigang Zang, Atsushi Nakamura, and Jiro Temmyo, "Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application," Opt. Express 21, 11448-11456 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-9-11448


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