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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 21, Iss. S1 — Jan. 14, 2013
  • pp: A123–A130

Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells

G. W. Shu, J. Y. Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, W. C. Chou, C. H. Wu, C. H. Chiu, and H. C. Kuo  »View Author Affiliations

Optics Express, Vol. 21, Issue S1, pp. A123-A130 (2013)

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Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

© 2012 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(260.3800) Physical optics : Luminescence

ToC Category:

Original Manuscript: August 13, 2012
Revised Manuscript: November 18, 2012
Manuscript Accepted: November 25, 2012
Published: December 10, 2012

G. W. Shu, J. Y. Lin, H. T. Jian, J. L. Shen, S. C. Wang, C. L. Chou, W. C. Chou, C. H. Wu, C. H. Chiu, and H. C. Kuo, "Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells," Opt. Express 21, A123-A130 (2013)

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