Optical polarization characteristics of semipolar (303̅1) and (303̅1̅) InGaN/GaN light-emitting diodes

doi:10.1364/OE.21.000A53

Optical polarization characteristics of semipolar (303̅1) and (303̅1̅) InGaN/GaN light-emitting diodes

Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura »View Author Affiliations

Optics Express, Vol. 21, Issue S1, pp. A53-A59 (2013)
http://dx.doi.org/10.1364/OE.21.000A53

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Abstract

Linear polarized electroluminescence was investigated for semipolar $(30 \bar{3} 1)$ and $(30 \bar{3} \bar{1})$ InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k⋅p method for the above two planes. The theoretical calculations are consistent with the experimental results.

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5440) Optical devices : Polarization-selective devices

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: August 20, 2012
Revised Manuscript: October 25, 2012
Manuscript Accepted: October 25, 2012
Published: November 27, 2012

Citation
Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura, "Optical polarization characteristics of semipolar (303̅1) and (303̅1̅) InGaN/GaN light-emitting diodes," Opt. Express 21, A53-A59 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-S1-A53

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References

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story, 2nd ed. (Springer, 2000).
P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000). [CrossRef] [PubMed]
F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999). [CrossRef]
Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, and S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010). [CrossRef]
Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010). [CrossRef]
Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).
Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012). [CrossRef]
C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012). [CrossRef]
N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005). [CrossRef]
L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, and M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011). [CrossRef]
A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).
M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008). [CrossRef]
S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, and C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010). [CrossRef]
S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011). [CrossRef]
F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010). [CrossRef]
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009). [CrossRef]
T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010). [CrossRef]
S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010). [CrossRef]
Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011). [CrossRef]
H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008). [CrossRef]
L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011). [CrossRef]
A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, and P. Vogl, “The 3D nanometer devices project nextnano: concepts, methods, results,” J. Comput. Electron. 5, 285–289 (2006). For the nextnano3 code, see http://www.nextnano.de .
C. Roberts, Q. Yan, M. S. Miao, and C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012). [CrossRef]
M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008). [CrossRef]
S. H. Park and D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN?GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007). [CrossRef]
Q. Yan, P. Rinke, M. Scheffler, and C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010). [CrossRef]
A. F. Wright, “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN,” J. Appl. Phys. 82(6), 2833–2839 (1997). [CrossRef]

Adachi, M.
Ahn, D.
Akita, K.
Baker, T. J.
Bernardini, F.
Brandt, O.
Brinkley, S.
Chakraborty, A.
Chung, R. B.
Cohen, D.
DenBaars, S. P.
Detchprohm, T.
Enya, Y.
Feezell, D.
Fellows, N. N.
Fiorentini, V.
Fujito, K.
Funato, M.
Gardner, N. F.
Grahn, H. T.
Ha, J. S.
Hanser, D.
Hirasawa, H.
Hou, W.
Hu, P. S.
Huang, C. Y.
Huang, S. C.
Ikegami, T.
Iso, K.
Katayama, K.
Kawaguchi, Y.
Kawakami, Y.
Kim, J. C.
Kneissl, M.
Kojima, K.
Koslow, I.
Krames, M. R.
Kubota, M.
Kyono, T.
Lin, Y. D.
Masui, H.
Menniger, J.
Miao, M. S.
Mukai, T.
Nakamura, S.
Nakamura, T.
Narukawa, Y.
Ohta, H.
Okamoto, K.
Pan, C. C.
Park, S. H.
Paskova, T.
Pfaff, N.
Ploch, S.
Ploog, K. H.
Preble, E. A.
Ramsteiner, M.
Rass, J.
Reiche, M.
Rinke, P.
Roberts, C.
Romanov, A. E.
Schade, L.
Scheffler, M.
Schwarz, U. T.
Shen, Y. C.
Sonoda, J.
Speck, J. S.
Sumitomo, T.
Tanaka, S.
Tanaka, T.
Tokuyama, S.
Trampert, A.
Ueda, M.
Ueno, M.
Van de Walle, C. G.
Waltereit, P.
Wernicke, T.
Wetzel, C.
Weyers, M.
Wierer, J. J.
Wright, A. F.
Wu, F.
Yamada, H.
Yamamoto, S.
Yan, Q.
Yoshizumi, Y.
You, S.
Zhao, Y.
Zhu, M.

Appl. Phys. Express

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012). [CrossRef]
Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010). [CrossRef]
Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).
S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, and C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010). [CrossRef]
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009). [CrossRef]
T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010). [CrossRef]
S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010). [CrossRef]

Appl. Phys. Lett.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011). [CrossRef]
S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011). [CrossRef]
F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010). [CrossRef]
Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012). [CrossRef]
N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005). [CrossRef]
L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, and M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011). [CrossRef]
S. H. Park and D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN?GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007). [CrossRef]
Q. Yan, P. Rinke, M. Scheffler, and C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010). [CrossRef]
M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008). [CrossRef]

J. Appl. Phys.

A. F. Wright, “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN,” J. Appl. Phys. 82(6), 2833–2839 (1997). [CrossRef]
C. Roberts, Q. Yan, M. S. Miao, and C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012). [CrossRef]
A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Jpn. J. Appl. Phys.

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, and S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010). [CrossRef]

Nature

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000). [CrossRef] [PubMed]

Phys. Rev. B

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008). [CrossRef]

Phys. Status Solidi A

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008). [CrossRef]

Phys. Status Solidi B

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011). [CrossRef]
F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999). [CrossRef]

Other

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story, 2nd ed. (Springer, 2000).
A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, and P. Vogl, “The 3D nanometer devices project nextnano: concepts, methods, results,” J. Comput. Electron. 5, 285–289 (2006). For the nextnano3 code, see http://www.nextnano.de .

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[1] S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story, 2nd ed. (Springer, 2000).

[2] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000). [CrossRef] [PubMed]

[3] F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999). [CrossRef]

[4] Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, and S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010). [CrossRef]

[5] Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010). [CrossRef]

[6] Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

[7] Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012). [CrossRef]

[8] C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012). [CrossRef]

[9] N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005). [CrossRef]

[10] L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, and M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011). [CrossRef]

[11] A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

[12] M. Kubota, K. Okamoto, T. Tanaka, and H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008). [CrossRef]

[13] S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, and C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010). [CrossRef]

[14] S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011). [CrossRef]

[15] F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010). [CrossRef]

[16] Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009). [CrossRef]

[17] T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, and T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010). [CrossRef]

[18] S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010). [CrossRef]

[19] Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011). [CrossRef]

[20] H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008). [CrossRef]

[21] L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011). [CrossRef]

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OpticsInfoBase

Energy Express

Optical polarization characteristics of semipolar (303̅1) and (303̅1̅) InGaN/GaN light-emitting diodes