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Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells |
Optics Express, Vol. 21, Issue S1, pp. A7-A14 (2013)
http://dx.doi.org/10.1364/OE.21.0000A7
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Abstract
A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07x10−3Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7x1020cm−3 and 15.8cm2/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56V, and a short circuit current of JSC = 1.54 mA/cm2 with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.
© 2012 OSA
OCIS Codes
(040.5350) Detectors : Photovoltaic
(310.1210) Thin films : Antireflection coatings
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.7005) Thin films : Transparent conductive coatings
ToC Category:
Photovoltaics
History
Original Manuscript: September 26, 2012
Revised Manuscript: October 23, 2012
Manuscript Accepted: November 5, 2012
Published: November 9, 2012
Citation
Ya-Ju Lee, Yung-Chi Yao, and Chia-Hao Yang, "Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells," Opt. Express 21, A7-A14 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-S1-A7
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