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Energy Express

  • Editor: Christian Seassal
  • Vol. 21, Iss. S5 — Sep. 9, 2013
  • pp: A864–A871

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C. Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu  »View Author Affiliations

Optics Express, Vol. 21, Issue S5, pp. A864-A871 (2013)

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GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Si-implanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantation-free regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

© 2013 OSA

OCIS Codes
(310.3840) Thin films : Materials and process characterization
(310.4925) Thin films : Other properties (stress, chemical, etc.)
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Light-Emitting Diodes

Original Manuscript: May 31, 2013
Revised Manuscript: July 9, 2013
Manuscript Accepted: August 5, 2013
Published: August 15, 2013

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C. Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu, "Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates," Opt. Express 21, A864-A871 (2013)

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