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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 1 — Jan. 13, 2014
  • pp: 463–469

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

Bing-Chen Lin, Kuo-Ju Chen, Chao-Hsun Wang, Ching-Hsueh Chiu, Yu-Pin Lan, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Yen-Kuang Kuo, and Hao-Chung Kuo  »View Author Affiliations


Optics Express, Vol. 22, Issue 1, pp. 463-469 (2014)
http://dx.doi.org/10.1364/OE.22.000463


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Abstract

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

© 2014 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: August 23, 2013
Revised Manuscript: October 11, 2013
Manuscript Accepted: October 14, 2013
Published: January 3, 2014

Citation
Bing-Chen Lin, Kuo-Ju Chen, Chao-Hsun Wang, Ching-Hsueh Chiu, Yu-Pin Lan, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Yen-Kuang Kuo, and Hao-Chung Kuo, "Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer," Opt. Express 22, 463-469 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-1-463


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