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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 1 — Jan. 13, 2014
  • pp: 900–907

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector

Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, and Woo-Young Choi  »View Author Affiliations


Optics Express, Vol. 22, Issue 1, pp. 900-907 (2014)
http://dx.doi.org/10.1364/OE.22.000900


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Abstract

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

© 2014 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: November 6, 2013
Revised Manuscript: December 28, 2013
Manuscript Accepted: December 30, 2013
Published: January 8, 2014

Citation
Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, and Woo-Young Choi, "SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector," Opt. Express 22, 900-907 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-1-900


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References

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