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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 10 — May. 19, 2014
  • pp: 11392–11398

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes

L. C. Le, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, X. G. He, X. J. Li, J. P. Liu, J. J. Zhu, S. M. Zhang, and H. Yang  »View Author Affiliations

Optics Express, Vol. 22, Issue 10, pp. 11392-11398 (2014)

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InGaN-based blue-violet laser diodes (LDs) suffer from electron leakage into the p-type regions, which could be only partially alleviated by employing the electron blocking layer (EBL). Here, a thin undoped InGaN interlayer prior to EBL is proposed to create an additional forbidden energy range above the natural conduction band edge, which further suppresses the electron leakage and thus improve the characteristics of LDs. Numerical device simulations reveal that when the proper composition and thickness of InGaN interlayer are chosen, the electron leakage could be efficiently eliminated without inducing any severe accumulation of electrons at the interlayer, resulting in a maximum output power of the device.

© 2014 Optical Society of America

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 13, 2014
Revised Manuscript: March 27, 2014
Manuscript Accepted: April 25, 2014
Published: May 5, 2014

L. C. Le, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. Yang, X. G. He, X. J. Li, J. P. Liu, J. J. Zhu, S. M. Zhang, and H. Yang, "Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes," Opt. Express 22, 11392-11398 (2014)

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