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Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates

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Abstract

Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemical lift-off and double-transfer techniques. Current-voltage, light output power, far-field radiation patterns, and electroluminescence characteristics of these three LEDs were discussed. At an injection current of 700 mA, the output powers of LEDs with the lateral structure on mirror/Si(100) substrate and vertical structure on mirror/Si(100) substrate were measured to be 155.07 and 261.07 mW, respectively. The output powers of these two LEDs had 70.63% and 187.26% enhancement compared to that of LED with the lateral structure, respectively. The result indicated this vertical structure LED was useful in improving the light extraction due to an enhancement in light scattering efficiency while the high-reflection mirror and diffuse surfaces were employed.

© 2014 Optical Society of America

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Figures (6)

Fig. 1
Fig. 1 Schematic diagrams of three kinds of GaN-on-Si based LED structure: (a) LS-LED (lateral structure without mirror), (b) DT-LED (lateral structure with mirror), and (c) VS-LED (vertical structure).
Fig. 2
Fig. 2 I-V characteristics of the LS-LED, DT-LED, and VS-LED measured under the (a) forward and (b) reverse biases.
Fig. 3
Fig. 3 Raman spectra of the LS-LED, DT-LED, and VS-LED.
Fig. 4
Fig. 4 Emission wavelength as a function of injection current for the LS-LED, DT-LED, and VS-LED.
Fig. 5
Fig. 5 Light output power and external quantum efficiency as a function of injection current for the LS-LED, DT-LED, and VS-LED.
Fig. 6
Fig. 6 (a) Far-field radiation patterns of the LS-LED, DT-LED, and VS-LED at the injection current of 350 mA. Emission images (@ 20 mA) of the (b) LS-LED, (c) DT-LED, and (d) VS-LED.
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