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Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes

Peng Dong, Jianchang Yan, Yun Zhang, Junxi Wang, Chong Geng, Haiyang Zheng, Xuecheng Wei, Qingfeng Yan, and Jinmin Li

Open Access Open Access

Abstract

Nanopillar AlGaN/GaN multiple quantum wells ultraviolet light-emitting diodes (LEDs) were fabricated by nanosphere lithography and dry-etching. The optical properties of the nanopillar LEDs were characterized by both temperature-dependent and time-resolved photoluminescence measurements. Compared to an as-grown sample, the nanopillar sample has a PL emission peak blue-shift of 7 meV, a 42% enhanced internal quantum efficiency at room temperature and a reduced radiative recombination lifetime from 870 picosecond to 621 picosecond at 7K. These results are directly from the suppressed quantum confined stark effect that is due to the strain relaxation in the nanopillar MQWs, further revealed by micro-Raman measurement. Additionally, finite-difference time domain simulation also proves better light extraction efficiency in the nanopillar LEDs.

© 2014 Optical Society of America

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Figures (8)
Fig. 1
Fig. 1 Schematic process flow of fabricating AlGaN/GaN nanopillar LEDs using the nanosphere lithography and dry-etching.

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Fig. 2
Fig. 2 The top-view (a), tilted (b) and cross-sectional (c) SEM images of the AlGaN/GaN nanopillar structure.

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Fig. 3
Fig. 3 The CL results of the AlGaN/GaN MQWs nanopillar LED sample measured at room temperature. The plane (a) and cross-sectional (b) monochromatic CL images of the nanopillar LEDs. The inset shows the CL spectrum of the nanopillar LEDs.

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Fig. 4
Fig. 4 PL spectra of as-grown sample and nanopillar sample at room temperature (a) and 10 K (b).

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Fig. 5
Fig. 5 Arrhenius plots of the PL intensities of the as-grown and nanopillar samples as a function of temperature from 10 K to 300 K.

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Fig. 6
Fig. 6 Time-resolved PL (TR-PL) spectra of the as-grown and nanopillar sample measured at low temperature (7 K).

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Fig. 7
Fig. 7 Raman spectra of the E2 (high) phonon mode of the as-grown and nanopillar samples, the inset shows a typical Raman spectra of the as-grown and nanopillar samples.

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Fig. 8
Fig. 8 Comparison of FDTD simulations of light propagation in (a) as-grown LED sample and (b) nanopillar LED sample.

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Tables (1)

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Table 1 the LEE of different directions by FDTD simulation.

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