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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S2 — Mar. 10, 2014
  • pp: A320–A327

Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes

Peng Dong, Jianchang Yan, Yun Zhang, Junxi Wang, Chong Geng, Haiyang Zheng, Xuecheng Wei, Qingfeng Yan, and Jinmin Li  »View Author Affiliations

Optics Express, Vol. 22, Issue S2, pp. A320-A327 (2014)

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Nanopillar AlGaN/GaN multiple quantum wells ultraviolet light-emitting diodes (LEDs) were fabricated by nanosphere lithography and dry-etching. The optical properties of the nanopillar LEDs were characterized by both temperature-dependent and time-resolved photoluminescence measurements. Compared to an as-grown sample, the nanopillar sample has a PL emission peak blue-shift of 7 meV, a 42% enhanced internal quantum efficiency at room temperature and a reduced radiative recombination lifetime from 870 picosecond to 621 picosecond at 7K. These results are directly from the suppressed quantum confined stark effect that is due to the strain relaxation in the nanopillar MQWs, further revealed by micro-Raman measurement. Additionally, finite-difference time domain simulation also proves better light extraction efficiency in the nanopillar LEDs.

© 2014 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 29, 2013
Revised Manuscript: January 23, 2014
Manuscript Accepted: January 25, 2014
Published: February 10, 2014

Peng Dong, Jianchang Yan, Yun Zhang, Junxi Wang, Chong Geng, Haiyang Zheng, Xuecheng Wei, Qingfeng Yan, and Jinmin Li, "Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes," Opt. Express 22, A320-A327 (2014)

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  1. M. Asif Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, “III–Nitride UV Devices,” Jpn. J. Appl. Phys. 44(10), 7191–7206 (2005). [CrossRef]
  2. Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, M. Mahbub Satter, S.-C. Shen, P. Douglas Yoder, J.-H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer, and F. A. Ponce, “Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate,” Appl. Phys. Lett. 102(10), 101110 (2013). [CrossRef]
  3. D. Miller, D. Chemla, T. Damen, A. Gossard, W. Wiegmann, T. Wood, and C. Burrus, “Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
  4. J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, “Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells,” Phys. Rev. B 57(16), R9435–R9438 (1998). [CrossRef]
  5. Y. Y. Zhang, H. Z. Xie, H. Y. Zheng, T. B. Wei, H. Yang, J. Li, X. Y. Yi, X. Y. Song, G. H. Wang, and J. M. Li, “Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes,” Opt. Express 20(6), 6808–6815 (2012). [CrossRef] [PubMed]
  6. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008). [CrossRef]
  7. T. Nishida, N. Kobayashi, and T. Ban, “GaN-free transparent ultraviolet light-emitting diodes,” Appl. Phys. Lett. 82(1), 1 (2003). [CrossRef]
  8. M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky, Y. Bilenko, J. Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, and M. Wraback, “AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%,” Appl. Phys. Express 5(8), 082101 (2012). [CrossRef]
  9. P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013). [CrossRef]
  10. J. Bai, Q. Wang, and T. Wang, “Characterization of InGaN-based nanorod light emitting diodes with different indium compositions,” J. Appl. Phys. 111(11), 113103 (2012). [CrossRef]
  11. C. H. Liao, W. M. Chang, H. S. Chen, C. Y. Chen, Y. F. Yao, H. T. Chen, C. Y. Su, S. Y. Ting, Y. W. Kiang, and C. C. Yang, “Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod,” Opt. Express 20(14), 15859–15871 (2012). [CrossRef] [PubMed]
  12. V. Ramesh, A. Kikuchi, K. Kishino, M. Funato, and Y. Kawakami, “Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well,” J. Appl. Phys. 107(11), 114303 (2010). [CrossRef]
  13. Y. Y. Huang, L. Y. Chen, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, Y. H. Lu, H. C. Kuo, and J. Huang, “Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays,” Nanotechnology 22(4), 045202 (2011). [CrossRef] [PubMed]
  14. H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010). [CrossRef]
  15. S. Li and A. Waag, “GaN based nanorods for solid state lighting,” J. Appl. Phys. 111(7), 071101 (2012). [CrossRef]
  16. C.-H. Chang, L.-Y. Chen, L.-C. Huang, Y.-T. Wang, T.-C. Lu, and J. J. Huang, “Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes,” IEEE J. Quantum Electron. 48(4), 551–556 (2012). [CrossRef]
  17. K. H. Li and H. W. Choi, “Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography,” J. Appl. Phys. 109(2), 023107 (2011). [CrossRef]
  18. L. Y. Chen, Y. Y. Huang, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, C. P. Chen, and J. J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010). [CrossRef] [PubMed]
  19. C. L. Cheung, R. J. Nikolic, C. E. Reinhardt, and T. F. Wang, “Fabrication of nanopillars by nanosphere lithography,” Nanotechnology 17(5), 1339–1343 (2006). [CrossRef]
  20. S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006). [CrossRef] [PubMed]
  21. Q. Wang, J. Bai, Y. P. Gong, and T. Wang, “Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods,” J. Phys. D Appl. Phys. 44(39), 395102 (2011). [CrossRef]
  22. L. Dai, B. Zhang, J. Y. Lin, and H. X. Jiang, “Comparison of optical transitions in InGaN quantum well structures and microdisks,” J. Appl. Phys. 89(9), 4951 (2001). [CrossRef]
  23. S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells,” J. Appl. Phys. 100(5), 054314 (2006). [CrossRef]
  24. Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi, and K. Kishino, “Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching,” J. Appl. Phys. 107(2), 023522 (2010). [CrossRef]
  25. T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Keading, S. Keller, U. K. Mishra, S. Nakamura, and S. P. DenBaars, “Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques,” J. Appl. Phys. 95(5), 2495 (2004). [CrossRef]
  26. T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (112̄0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004). [CrossRef]
  27. P. Puech, F. Demangeot, J. Frandon, C. Pinquier, M. Kuball, V. Domnich, and Y. Gogotsi, “GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields,” J. Appl. Phys. 96(5), 2853–2856 (2004). [CrossRef]
  28. P. Perlin, C. Jauberthie-Carillon, J. P. Itie, A. San Miguel, I. Grzegory, and A. Polian, “Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure,” Phys. Rev. B Condens. Matter 45(1), 83–89 (1992).

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