Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications

Open Access Open Access

Abstract

We report the efficiency enhancement of III-V InGaP/GaAs/ Ge triple-junction (TJ) solar cells using a novel structure, i.e., vertically-oriented gallium oxide hydroxide (GaOOH) nanopillars (NPs), as an antireflection coating. The optical reflectance properties of rhombus-shaped GaOOH NPs, which were synthesized by a simple, low-cost, and large-scalable electrochemical deposition method, were investigated, together with a theoretical analysis using the rigorous coupled-wave analysis method. For the GaOOH NPs, the solar weighted reflectance of ~8.5% was obtained over a wide wavelength range of 300-1800 nm and their surfaces exhibited a high water contact angle of ~130° (i.e., hydrophobicity). To simply demonstrate the feasibility of device applications, the GaOOH NPs were incorporated into a test-grown InGaP/GaAs/Ge TJ solar cell structure. For the InGaP/GaAs/Ge TJ solar cell with broadband antireflective GaOOH NPs, the conversion efficiency (η) of ~16.47% was obtained, indicating an increased efficiency by 3.47% compared to the bare solar cell (i.e., η~13%).

© 2014 Optical Society of America

Full Article  |  PDF Article
More Like This
Compound biomimetic structures for efficiency enhancement of Ga0.5In0.5P/GaAs/Ge triple-junction solar cells

Mu-Min Hung, Hau-Vei Han, Chung-Yu Hong, Kuo-Hsuan Hong, Tung-Ting Yang, Peichen Yu, Yu-Rue Wu, Hong-Yih Yeh, and Hong-Cheng Huang
Opt. Express 22(S2) A295-A300 (2014)

Broadband antireflective germanium surfaces based on subwavelength structures for photovoltaic cell applications

Jung Woo Leem, Young Min Song, and Jae Su Yu
Opt. Express 19(27) 26308-26317 (2011)

Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells

Jung Woo Leem, Dong-Hwan Jun, Jonggon Heo, Won-Kyu Park, Jin-Hong Park, Woo Jin Cho, Do Eok Kim, and Jae Su Yu
Opt. Express 21(S5) A821-A828 (2013)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 Schematic diagram of layer structure of the III-V InGaP/GaAs/Ge TJ solar cell with GaOOH NPs grown by the ED method.
Fig. 2
Fig. 2 (a) Calculated Ravg and SWR of ATO/Ge as a function of ATO film thickness and (b) top- and side-view SEM images of the GaOOH NPs grown on the ATO/Ge substrate. The n and k of ATO and Ge used in this calculation are shown in the inset of (a).
Fig. 3
Fig. 3 (a) Measured reflectance spectra of Ge substrate, ATO/Ge and GaOOH NPs/ATO/Ge and solar spectral irradiance of AM1.5g and (b) calculated reflectance spectra and electric field intensity distributions at λ = 800 nm of (i) Ge substrate, (ii) ATO/Ge, and (iii) GaOOH NPs/ATO/Ge. For comparison, the measured reflectance spectrum of a typical Al2O3/TiO2 DLARC is also shown in (a).
Fig. 4
Fig. 4 Photograph images of a water droplet on the Ge substrate, ATO/Ge, and GaOOH NPs/ATO/Ge.
Fig. 5
Fig. 5 (a) Low- and high-magnification SEM images of GaOOH NPs grown on the InGaP/GaAs/Ge TJ solar cell with the ATO seed layer and (b) measured J-V characteristics on the test-grown III-V InGaP/GaAs/Ge TJ solar cells with ATO film, GaOOH NPs/ATO seed layer, and Al2O3/TiO2 double-layer as an ARC. For a reference, the measured J-V curve of solar cell with the bare surface is also shown in (b). The device characteristics of the corresponding solar cells are summarized in the inset of (b).
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.