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Optical properties associated with strain relaxations in thick InGaN epitaxial films

Wen-Che Tsai, Chia-He Hsu, Shao-Fu Fu, Fang-Wei Lee, Chin-Yu Chen, Wu-Ching Chou, Wei-Kuo Chen, and Wen-Hao Chang

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Abstract

Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.

© 2014 Optical Society of America

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Figures (7)
Fig. 1
Fig. 1 (a) X-ray diffraction and (b) PL spectra of InGaN films grown at different temperatures from 675 to 750 °C.

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Fig. 2
Fig. 2 Reciprocal space mapping of InGaN films grown at (a) 675 °C, (b) 700 °C, (c) 725 °C, and (d) 750 °C.

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Fig. 3
Fig. 3 (a) RSM of d < 20 nm InGaN film grown at 675 °C. (b) PL spectra of InGaN films with different thickness grown at 675 °C.

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Fig. 4
Fig. 4 (a) Temperature-dependent PL of InGaN film grown at 725 °C. (b) Integrated PL intensity as a function of temperature for both phases. (c) Emission efficiency (η) of both phases and (d) RT PL intensity of relaxed phase as a function of Tg.

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Fig. 5
Fig. 5 (a) TRPL spectra measured at 12 K and (b) the effective carrier lifetimes deduced from decay traces for both phases as a function of Tg.

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Fig. 6
Fig. 6 Energy-dependent TRPL of InGaN films grown at 675 °C for (a) strained phase and (b) relaxed phase.

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Fig. 7
Fig. 7 The measured decay time τ as a function of temperature T for (a) the strained phase and (b) the relaxed phase of the InGaN film grown at 725 °C. The deduced radiaive τr(T) and nonradiative τnr(T) lifetimes are also shown. (c) The PL peak energies of the strained and relaxed phases as a function of temperature for the same sample.

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Tables (1)

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Table 1 Thickness d, Lattice Constants a and c, and In Composition x of InGaN Films Grown at Different Growth Temperatures Tg

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