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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S2 — Mar. 10, 2014
  • pp: A491–A497

Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells

Jūras Mickevičius, Jonas Jurkevičius, Gintautas Tamulaitis, Michael S. Shur, Max Shatalov, Jinwei Yang, and Remis Gaska  »View Author Affiliations

Optics Express, Vol. 22, Issue S2, pp. A491-A497 (2014)

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The influence of carrier localization on photoluminescence efficiency droop and stimulated emission is studied in AlGaN multiple quantum wells with different strength of carrier localization. We observe that carrier delocalization at low temperatures predominantly enhances the nonradiative recombination and causes the droop, while the main effect of the delocalization at elevated temperatures is enhancement of PL efficiency due to increasing contribution of bimolecular recombination of free carriers. When the carrier thermal energy exceeds the dispersion of the potential fluctuations causing the carrier localization, the droop is caused by stimulated carrier recombination.

© 2014 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: December 12, 2013
Revised Manuscript: January 13, 2014
Manuscript Accepted: January 20, 2014
Published: February 27, 2014

Jūras Mickevičius, Jonas Jurkevičius, Gintautas Tamulaitis, Michael S. Shur, Max Shatalov, Jinwei Yang, and Remis Gaska, "Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells," Opt. Express 22, A491-A497 (2014)

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