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A novel integrated structure of thin film GaN LED with ultra-low thermal resistance

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Abstract

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

© 2014 Optical Society of America

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Corrections

Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng, "A novel integrated structure of thin film GaN LED with ultra-low thermal resistance: erratum," Opt. Express 22, A960-A960 (2014)
https://opg.optica.org/oe/abstract.cfm?uri=oe-22-S3-A960

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Figures (6)

Fig. 1
Fig. 1 Schematic diagram of TFP LED structure.
Fig. 2
Fig. 2 Integration packaging process flow of TFP LED, (a) chip to wafer eutectic bonding, (b) laser lift-off and Ga remove, (c) U-GaN etching, (d) N-pad metallization, (e) wire bonding and (f) lens molding and singulation.
Fig. 3
Fig. 3 Photograph of the fabricated TFP LED.
Fig. 4
Fig. 4 Results of leakage current test of multiple TFP LEDs on packaging submount.
Fig. 5
Fig. 5 Thermal resistance measured by T3ster (a) TFP with direct eutectic bonding; (b) TFP with flux eutectic bonding; (c) commercial face-up LED package and (d) commercial thin-GaN LED package.
Fig. 6
Fig. 6 Test results of normalized light output power of TFP and commercial high power LED packages.

Tables (1)

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Table 1 Shear force test results of different eutectic bonding process.

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