Abstract
This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.
© 2014 Optical Society of America
Full Article | PDF ArticleCorrections
Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng, "A novel integrated structure of thin film GaN LED with ultra-low thermal resistance: erratum," Opt. Express 22, A960-A960 (2014)https://opg.optica.org/oe/abstract.cfm?uri=oe-22-S3-A960
More Like This
Chun Nien Liu, Chia Chun Hu, Yang Jun Zheng, Yu Fu Hsu, and Zhi Ting Ye
Opt. Express 32(7) 12438-12448 (2024)
Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng
Opt. Express 22(S3) A960-A960 (2014)
Kung-Cheng Chen, Shih-Yung Huang, Wei-Kai Wang, and Ray-Hua Horng
Opt. Express 23(12) 15452-15458 (2015)