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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A601–A606

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance

Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A601-A606 (2014)

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This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: December 20, 2013
Revised Manuscript: February 14, 2014
Manuscript Accepted: February 24, 2014
Published: March 12, 2014

Shih-Yi Wen, Hung-Lieh Hu, Yao-Jun Tsai, Chen-Peng Hsu, Re-Ching Lin, and Ray Hua Horng, "A novel integrated structure of thin film GaN LED with ultra-low thermal resistance," Opt. Express 22, A601-A606 (2014)

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