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Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang

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Abstract

The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.

© 2014 Optical Society of America

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Figures (7)
Fig. 1
Fig. 1 I–V characteristics and dynamic resistances of all LEDs. The error bar shows the distribution of the data.

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Fig. 2
Fig. 2 Curves of measured output power and EQE with respect to the injection current density for all LEDs.

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Fig. 3
Fig. 3 Electrostatic fields of (a) LED I, (b) LED II, (c) LED III, and (d) LED IV at 30 A/cm2.

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Fig. 4
Fig. 4 Energy band diagrams of (a) LED I, (b) LED II, (c) LED III, and (d) LED IV at 30 A/cm2.

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Fig. 5
Fig. 5 (a) Electron and (b) hole concentration distributions within the active regions of these four LEDs at 30 A/cm2.

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Fig. 6
Fig. 6 Electron current density profiles of these four LEDs at 30 A/cm2.

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Fig. 7
Fig. 7 Near-field emission intensity images of LEDs I, II, and IV (a)–(c) at 30 A/cm2 and (d)–(f) at 100 A/cm2. (g) Light emission intensity profiles of LEDs along the dashed lines at 100 A/cm2.

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Equations (1)

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d AlGaN E AlGaN + d InGaN E InGaN =0,
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