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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A779–A789

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhengang Ju, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun, and Hilmi Volkan Demir  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A779-A789 (2014)

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Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 21, 2013
Revised Manuscript: March 19, 2014
Manuscript Accepted: March 25, 2014
Published: April 2, 2014

Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhengang Ju, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun, and Hilmi Volkan Demir, "On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes," Opt. Express 22, A779-A789 (2014)

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