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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A790–A799

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Chentian Shi, Chunfeng Zhang, Fan Yang, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xiaoyong Wang, and Min Xiao  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A790-A799 (2014)

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Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that such improvement is a net effect that the lateral carrier confinement overcomes the increased surface trapping introduced during fabrication.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(300.6500) Spectroscopy : Spectroscopy, time-resolved

ToC Category:

Original Manuscript: November 22, 2013
Revised Manuscript: March 4, 2014
Manuscript Accepted: March 26, 2014
Published: April 3, 2014

Chentian Shi, Chunfeng Zhang, Fan Yang, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xiaoyong Wang, and Min Xiao, "Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods," Opt. Express 22, A790-A799 (2014)

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