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GaN-based light-emitting diodes on graphene-coated flexible substrates

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Abstract

We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method. Optical and electrical properties of thin laser lift-offed LEDs on the flexible substrates were characterized under both relaxed and strained conditions. The graphene on paper substrates remained conducting when the graphene/paper structure was folded. The high transmittance, low sheet resistance and high failure strain of the graphene make it an ideal candidate as the transparent and conductive layer in flexible optoelectronics.

© 2014 Optical Society of America

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Figures (4)

Fig. 1
Fig. 1 Schematic fabrication process of LLO-LED / carbon-tape / graphene / flexible substrate
Fig. 2
Fig. 2 (a, b) photograph under relaxed condition (a) before and (b) under applying the forward bias (c, d) photograph under 0.5% strained condition (c) before and (d) under applying the forward bias. Note that Figs. 2(a) and 2(c) and Figs. 2(b) and 2(d) were obtained under the room light and with the light-off, respectively.
Fig. 3
Fig. 3 (a) Transmittance of the tri-layer graphene on PET substrate (inset: photograph of the graphene on PET) (b) I-V characteristics when relaxed and 0.5% strained conditions, respectively. (inset: ELs from the LLO-LEDs)
Fig. 4
Fig. 4 (a) LLO-LED/carbon-tape/graphene/flat paper under the forward bias condition (inset: EL image from the LLO-LED device) (b, c) LLO-LED/carbon-tape/graphene/folded paper under the forward bias condition (inset: EL image from the LLO-LED device) (d) I-V characteristics of LLO-LEDs on (flat or folded) paper substrate
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