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Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park

Open Access Open Access

Abstract

We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD) simulation shows that the light extraction efficiency (LEE) is increased by light scattering effect by nanopores. The output power of LED with NP GaN is increased up to 123.1% at 20 mA, compared to that of LED without NP GaN. The outstanding performance of LEDs with NP GaN is attributed to the increased internal quantum efficiency (IQE) by the carrier localization in the indium-rich clusters, low defect density in MQWs, and increased LEE owing to the light scattering in NP GaN.

© 2014 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 (a) Schematic diagram of LEDs grown on a NP GaN layer, (b) SEM image of NP GaN-embedded LED structure etched at an applied voltage of 17 V. (c) Top and (d) cross-sectional SEM images of NP GaN etched at an applied voltage of 17 V.

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Fig. 2
Fig. 2 Raman spectra of GaN grown on an NP GaN layer.

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Fig. 3
Fig. 3 (a) Room-temperature PL spectra of a MQW structure grown on a NP GaN layer. (b) Peak position and FWHM of PL for reference LED, and LED(NP GaN)-1, −2, and −3. (c) Peak shift of TDPL spectra of LEDs grown on NP GaN layers. (d) Arrhenius plot for LEDs grown on NP GaN layers.

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Fig. 4
Fig. 4 Schematic diagrams with calculated electric-field distributions of (a) LED without NP GaN, and (b) LED with NP GaN. (c) The size distribution of nanovoids used in FDTD simulations over an area of 2.5 × 2.5 μm of NP GaN-3 in LED(NP GaN-3). The inset shows an SEM image of NP GaN in LED(NP GaN-3). (d) Calculated light intensity as a function of simulation time for LEDs with and without NP GaN. (e) The IQE and enhanced LEE of reference LED and LED(NP GaN)s assuming that the LEE of LED without nanoporous GaN is 100%.

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Fig. 5
Fig. 5 (a) I-V curve and (b) optical output power of reference LED and LED(NP GaN)-1, −2, and −3.

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

Δ ω γ = ω γ − ω o = K γ ⋅ σ x x
E g ( T )= E g ( 0 )− α T 2 T−β − σ 2 k B T
I( T )= I( 0 ) 1+C⋅exp( − E a / k B T )
V F = n k B T q ln( I F A )+ E g (T) q + I F R S
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