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Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer

Binglei Fu, Junjie Kang, Tongbo Wei, Zhiqiang Liu, Zhe Liu, Naixin Liu, Zhuo Xiong, Zhi Li, Xuecheng Wei, Hongxi Lu, Xiaoyan Yi, Jinmin Li, and Junxi Wang

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Abstract

We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid arrays with inclined side planes. The following lateral overgrowth process from the etched n-GaN template substantially reduced the edge dislocation density and residential compressive strain in epilayers. The efficiency droop of LED samples thus could be modified due to the reduced polarization field, resulting from the strain relaxation in epilayers. What is more, the peak efficiency and reverse current leakage were also modified due to the reduction of dislocations.

© 2014 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 (a) The schematic illustrations of the LED structures with etch-regrown n-GaN layers; (b) 45°-tilted SEM image of the GaN pillars formed from the n-GaN template after the traditional lithography process; (c) Plan-view SEM image of the GaN pyramids formed from the GaN pillars after the wet etching process.

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Fig. 2
Fig. 2 The 20 × 20 μm AFM scans of the etched pyramid shaped n-GaN surface (a) and the n-GaN surface after regrown for 4 minutes (b), 8 minutes (c) and 28 minutes (d) from the pyramid shaped n-GaN layer. (d) the cross-sectional TEM image of the n-GaN layers after the etch-regrown process.

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Fig. 3
Fig. 3 (a) Symmetric (002) and (b) asymmetric (102) X-ray rocking curves of the etch-regrown and reference n-GaN layers. (c) the peak position of the E2 (high) mode of the Raman spectra for the etch-regrown and reference n-GaN layers. From 1 to 20, the measurement position moves from the orientation flat to the other side of the wafer. (d) the typical room temperature Raman spectra of the etch-regrown and reference n-GaN layers.

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Fig. 4
Fig. 4 The excitation dependent PL spectra measured at room temperature of LED samples with etch-regrown n-GaN (a) and reference n-GaN (b).

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Fig. 5
Fig. 5 (a) The EQE and output power as a function of forward current for LEDs with reference and etch-regrown n-GaN. (b) the forward I-V curves of LEDs with reference and etch-regrown n-GaN. Inset shows the corresponding reverse I-V characteristics.

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