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Experimental observation of electroluminescence enhancement on green LEDs mediated by surface plasmons

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Abstract

We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-plasmon (SP)-mediated green LEDs. On the p-clad surface of InGaN/GaN multi-quantum well LEDs, a 2-dimensional, second-order grating structure is textured and coated with an Ag electrode. With this setup, a larger EL enhancement factor is obtained at a higher injected current, which suggests that SP-LEDs can be a possible solution to efficiency droop, which is one of the main problems in developing high-power LEDs. Details regarding the implementation of our device are discussed.

© 2014 Optical Society of America

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Figures (6)

Fig. 1
Fig. 1 A schematic of flip-chip reflection type InGaN QW LEDs mediated by SPs.
Fig. 2
Fig. 2 (a) Purcell enhancement factors as a function of the diameter of the Ag pillar. (b) Reflectance of the Ag-pillar-grating as a function of the grating depth.
Fig. 3
Fig. 3 (a) A TEM image of InGaN MQW (side view). SEM images of grating structure etched on p-GaN layer (b), and a side view of the Ag layer evaporated on p-GaN layer (c).
Fig. 4
Fig. 4 (a) PL intensity spectra. (b) PL decay lifetimes measured at low (17 K) and room (300 K) temperatures. Data of the SP-LED and the reference are shown as red and black open-circles, respectively, and the solid lines are the fitting.
Fig. 5
Fig. 5 (a) The EL of the SP-LED as a function of the injected current in the range of 0.01~0.1 A. 25% of the luminous enhancement is obtained at 0.1 A. (b) The current-voltage characteristic of the SP-LED. Almost constant improvement of 13% was observed in the entire current range.
Fig. 6
Fig. 6 (a) The WPE of the SP-LED and the reference as a function of the injected current. (b) The WPE enhancement factor Δ η p o w e r is consistently increasing with the injected current, up to 51.2% at 0.1 A.
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