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Electroluminescence enhancement in InGaN light-emitting diode during the electrical stressing process

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Abstract

This study of the optoelectronic properties of blue light-emitting diodes under direct current stress. It is found that the electroluminescence intensity increases with duration of stress, and the efficiency droop curves illustrated that the peak-efficiency and the peak-efficiency-current increases and decreases, respectively. We hypothesize that these behaviors mainly result from the increased internal quantum efficiency.

© 2014 Optical Society of America

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Figures (5)

Fig. 1
Fig. 1 (a) Normalized EL intensity and (b) EL spectra of the sample measured after different stressing durations.
Fig. 2
Fig. 2 (a) Wall plug efficiency (WPE) as a function of the current density. (b) Peak-efficiency and peak-efficiency current as a function of stressing time.
Fig. 3
Fig. 3 The I-V characteristics of the sample after different stressing times at room temperature.
Fig. 4
Fig. 4 (a) Integrated EL intensity as a function of current density after varying durations of stress. (b) Logarithmic value of the integrated PL intensity as a function of temperature.
Fig. 5
Fig. 5 (a) Cumulative structure functions of different injection current densities. (b) Normalized EL intensity as a function of the stressing time under different stressing conditions.

Equations (4)

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I Q E = B n 2 / ( A n + B n 2 + C n 3 ) ,
L = P * I m ,
I P L ( T ) = 1 / ( 1 + C · e x p ( E a / k T ) ) ,
T j = R t h × I V + T b ,
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